AP10N70P-A Datasheet PDF - Advanced Power Electronics

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AP10N70P-A
Advanced Power Electronics

Part Number AP10N70P-A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP10N70R/P-A
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
650V
RDS(ON)
0.62Ω
G ID 10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
G
D
S
The TO-220 and TO-262 package is widely preferred for commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+30
10
6.8
40
174
1.39
50
10
-55 to 150
-55 to 150
TO-262(R)
TO-220(P)
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.72
62
Unit
/W
/W
Data & specifications subject to change without notice
1
200811035



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AP10N70R/P-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA
Static Drain-Source On-Resistance3 VGS=10V, ID=5.0A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS= + 30V
ID=10A
Gate-Source Charge
VDS=480V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=300V
Rise Time
ID=10A
Turn-off Delay Time
RG=10Ω,VGS=10V
Fall Time
RD=30Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=15V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
650 -
-
- - 0.62
2-4
- 16 -
- - 10
- - 100
- - +100
- 36 58
- 8.3 -
- 11.5 -
- 15 -
- 20 -
- 52 -
- 23 -
- 1950 3120
- 630 -
- 20 -
- 23
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 575 - ns
- 10.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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20
T C =25 o C
16
12
10V
6.0V
5.0V
8
4.5V
4
V G =4.0V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP10N70P/R-A
16
T C =150 o C
12
8
4
10V
6.0V
5.0V
4.5V
V G = 4.0V
0
0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =5A
V G =10V
2
1
0
25 50 75 100 125
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
1
0.5
0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP10N70P/R-A
16
I D =10A
12 V DS =320V
V DS =400V
V DS =480V
8
4
0
0 20 40
Q G , Total Gate Charge (nC)
60
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1
T c =25 o C
Single Pulse
10ms
100ms
1S
DC
0.1
1
10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
4000
3000
C2000
iss
1000
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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AP10N70P-A pdf
AP10N70P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP10N70P-A
Advanced Power Electronics
AP10N70P-A pdf

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