AP05N20GH-HF Datasheet PDF - Advanced Power Electronics

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AP05N20GH-HF
Advanced Power Electronics

Part Number AP05N20GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP05N20GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
D
Fast Switching Characteristics
RoHS Compliant & Halogen-Free
G
Description
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP05N20GJ) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
200V
600mΩ
5.8A
GDS
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
+20
5.8
3.7
20
44.6
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.8
62.5
110
Unit
/W
/W
/W
1
201110062



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AP05N20GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=5A
VGS=4.5V, ID=2A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=160V, VGS=0V
VGS=+20V, VDS=0V
ID=5A
VDS=160V
VGS=10V
VDD=100V
ID=5A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
200 - - V
- - 600 mΩ
- - 620 mΩ
1 - 3V
-7-S
- - 25 uA
- - +100 nA
- 30 48 nC
- 3 - nC
- 11.5 - nC
-6
- ns
- 8.5 - ns
- 30 - ns
-5
- ns
- 530 850 pF
- 70 - pF
- 35 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 190 - ns
- 1.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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16
T C = 25 o C
12
8
10V
8.0V
7.0V
6.0V
V G =5.0V
4
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.4
I D =1mA
1.2
1
0.8
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
5
4
3
2 T j =150 o C
1
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP05N20GH/J-HF
12
T C =150 o C
10
8
10V
8.0V
7.0V
6.0V
V G =5.0V
6
4
2
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =5A
2.4 V GS =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =1mA
1.6
150
1.2
0.8
0.4
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP05N20GH/J-HF
12
I D =5A
10 V DS =100V
V DS =120V
V DS =160V
8
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
40
Fig 7. Gate Charge Characteristics
100
Operation in this area
10 limited by RDS(ON)
100us
1ms
1
10ms
T c =25 o C
Single Pulse
100ms
DC
0
1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
f=1.0MHz
800
600
C iss
400
200
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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AP05N20GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP05N20GH-HF
Advanced Power Electronics
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