AP05FN50I Datasheet PDF - Advanced Power Electronics

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AP05FN50I
Advanced Power Electronics

Part Number AP05FN50I
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


AP05FN50I datasheet pdf
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Advanced Power
Electronics Corp.
Fast trr Performance
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
AP05FN50I
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
500V
1.8Ω
G ID 4.4A
S
Description
AP05FN50 series are specially designed as main switching devices
for universal 90~265VAC off-line AC/DC converter applications. It
provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching design and cost-effectiveness.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
GD S
TO-220CFM(I)
Rating
500
+20
4.4
2.7
18
31.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Unit
/W
/W
1
201211273



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AP05FN50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=2.7A
VDS=VGS, ID=250uA
VDS=10V, ID=2.7A
VDS=500V, VGS=0V
VGS=+20V
ID=1A
VDS=400V
VGS=10V
VDD=250V
ID=3.1A
RG=12Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
500 - - V
- - 1.8 Ω
1 - 4V
- 4.5 -
S
- - 25 uA
- - +100 nA
- 20 32 nC
- 3.3 - nC
- 6.5 - nC
- 9 - ns
- 8 - ns
- 36 - ns
- 13.5 - ns
- 900 1440 pF
- 90 - pF
- 5 - pF
- 2.5 5 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=4.5A, VGS=0V
IS=3.1A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 75 - ns
- 185 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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8
T C =25 o C
6
4
10V
8.0V
7.0V
6.0V
V G =5.0V
2
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j = 150 o C
T j = 25 o C
6
4
2
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP05FN50I
5
T C =150 o C
4
3
10V
7 .0V
5 .0 V
V G = 4.0V
2
1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =2.7A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
1
0.5
0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP05FN50I
12
I D =1A
10
V DS =250V
V DS =300V
8
V DS =400V
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
Operation in this area
limited by RDS(ON)
100us
1 1ms
10ms
100ms
0.1 1s
T c =25 o C
Single Pulse
0.01
1
10 100
V DS , Drain-to-Source Voltage (V)
DC
1000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
1600
1200
C iss
800
400
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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