AP01L60T Datasheet PDF - Advanced Power Electronics

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AP01L60T
Advanced Power Electronics

Part Number AP01L60T
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP01L60T
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Fast Switching Characteristics
Simple Drive Requirement
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TA=100
IDM
PD@TA=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
600
±30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
150
Unit
/W
Data & specifications subject to change without notice
1
200810225



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AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=0.5A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=±30V
ID=100mA
Gate-Source Charge
VDS=480V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDD=300V
Rise Time
ID=1A
Turn-off Delay Time
RG=10Ω,VGS=10V
Fall Time
RD=300Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
600 - - V
- 0.8 - V/
- - 12
2 - 4V
- 0.8 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 7 11 nC
- 1.4 - nC
- 3.4 - nC
-8
- ns
-5
- ns
- 13 - ns
-9
- ns
- 260 420 pF
- 20 - pF
- 3 - pF
-3 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=160mA, VGS=0V
IS=1A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 345 - ns
- 1 - µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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1.5
T A =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.0V
0.0
0
12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.4 0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP01L60T
1.00
T A =150 o C
0.75
0.50
0.25
10V
5.0V
4.5V
V G =4.0V
0.00
0
10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
I D =0.5A
2.4 V G =10V
1.8
1.2
0.6
0.0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.6
150
3.2
2.8
2.4
2
1.6
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP01L60T
15
I D = 100m A
12 V DS = 480 V
9
6
3
0
0123456789
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
0.20
0.15
0.10
0.05
0.00
25
50 75 100 125
T A , Case Temperature ( o C )
150
Fig 9. Maximum Drain Current v.s.
Case Temperature
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
1000 f=1.0MHz
C iss
100
C oss
10
C rss
1
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1.2
0.8
0.4
0
25 50 75 100 125
T A , Case Temperature( o C)
Fig 10. Typical Power Dissipation
150
VG
10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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