AOL1718 Datasheet PDF - Alpha & Omega Semiconductors

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AOL1718
Alpha & Omega Semiconductors

Part Number AOL1718
Description 30V N-Channel MOSFET
Page 7 Pages


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AOL1718
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AOL1718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
90A
< 3m
< 4.3m
100% UIS Tested
100% Rg Tested
UltraSO-8TM
Top View
Bottom View
D
G
S
S
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
90
71
410
21
16
40
80
100
50
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
48
1
Max
25
60
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: April 2011
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AOL1718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
0.1
mA
20
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.8 2.2
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
410
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
2.4 3
3.8 4.6
m
VGS=4.5V, ID=20A
3.4 4.3 m
gFS Forward Transconductance
VDS=5V, ID=20A
87 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.4 0.7
90
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2975
485
204
0.28
3719
693
340
0.56
4463
900
476
0.84
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
48 60 72 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
20 25 30 nC
12 15 18 nC
Qgd Gate Drain Charge
6 10 14 nC
tD(on)
Turn-On DelayTime
9.2 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
10.7
ns
tD(off)
Turn-Off DelayTime
RGEN=3
40 ns
tf Turn-Off Fall Time
12.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
10 13 16 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
21 26.5 32 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
10V
140
120
100
4V
4.5V
5V
3.5V
80
60
40
VGS=3V
20
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
120
VDS=5V
100
80
60
40 125°C
20 25°C
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
5
VGS=4.5V
4
3
2
VGS=10V
1
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
1.8 VGS=10V
ID=20A
1.6
1.4
1.2
1
17
5
2
VGS=4.5V10
ID=20A
0.8
0 25 50 75 100 125 150 175 200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
8
ID=20A
6
125°C
4
2
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+4001
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 2: April 2011
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AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
ID=20A
8
6
4
2
0
0 10 20 30 40 50 60
Qg (nC)
Figure 7: Gate-Charge Characteristics
6000
5000
4000
Ciss
3000
2000
1000
Coss
Crss
0
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
100.0
10.0
RDS(ON)
limited
1.0
0.1
10µs
10µs
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1000
800
TJ(Max)=175°C
TC=25°C
600 17
5
400 2
10
200
0
0.0001 0.001 0.01
0.1
1
10
0
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
Ju1n8ction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Rev 2: April 2011
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