AM4920 Datasheet PDF - AiT Semiconductor

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AM4920
AiT Semiconductor

Part Number AM4920
Description 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Page 8 Pages


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AiT Semiconductor Inc.
www.ait-ic.com
AM4920
MOSFET
30V DUAL N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM4920 is the Dual N-Channel logic
enhancement mode power field effect transistor is
produced using high cell density. Advanced trench
technology to provide excellent RDS(ON).
The device is suitable for use as a load switch or in
PWM and gate charge for most of the synchronous
buck converter applications.
30V / 7.8A, RDS(ON) =16mΩ (typ.)@VGS=10V
30V / 5.8A, RDS(ON) =28mΩ (typ.)@VGS=4.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOP8 package
The AM4920 is available in SOP8 Package
ORDERING INFORMATION
APPLICATIONS
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
Package Type
Part Number
SOP8
AM4920M8R
M8
AM4920M8VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix V means Halogen free Package
N- CHANNEL MOSFET
REV1.1
- OCT 2010 RELEASED, JAN 2015 UPDATED -
-1-



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AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM4920
MOSFET
30V DUAL N-CHANNEL ENHANCEMENT MODE
Pin #
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Top View
Function
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
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AM4920
MOSFET
30V DUAL N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25Unless otherwise specified
VDSS, Drain-Source Voltage
30V
VGSS, Gate-Source Voltage
±20V
ID, Continuous Drain Current
TA =25
7.8A
(VGS=10V NOTE1)
TA =70
6A
IDM, Pulsed Drain Current NOTE2
25A
EAS, Single Pulse Avalanche Energy L=0.1mH NOTE3
27mJ
IAS, Avalanche Current
14A
PD, Power Dissipation
TA =25
TA =70
2.0W
1.4W
TJ, Operation Junction Temperature
-55~150
TSTG, Storage Temperature Range
-55~150
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL INFORMATION
Parameter
Thermal Resistance-Junction to Ambient NOTE1
Thermal Resistance Junction to Lead NOTE1
Steady-State
Steady-State
Symbol
RθJA
RθJC
Max Unit
85 °C/W
50 °C/W
REV1.1
- OCT 2010 RELEASED, JAN 2015 UPDATED -
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AM4920
MOSFET
30V DUAL N-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25, unless otherwise specified
Parameter
Symbol
Conditions
Min Type Max Units
Static Parameters
Drain-Source Breakdown Voltage V(BR)DSS VGS =0V,ID =250μA
30 - - V
Gate Threshold Voltage
VGS(th) VDS =VGS,ID =250μA
1.0 - 2.5 V
Gate Leakage Current
IGSS VDS=0V,VGS=±20V
- - ±100 nA
Zero Gate Voltage Drain Current
VDS =24V,VGS =0V
TJ =25°C
IDSS
VDS =24V,VGS =0V
TJ =55°C
- -1
μA
- -5
Drain-source On-ResistanceNOTE2
RDS(ON)
VGS=10V,ID=7.8A
VGS=4.5V,ID=5.8A
- 16 20
- 28 36
Forward Transconductance
gFS VDS=10V,ID=6A
- 5.6 -
S
Source-Drain Doide
Diode Forward VoltageNOTE2
VSD IS=1.7A,VGS=0V
- 0.75 1.0 V
Continuous Source CurrentNOTE1,4
IS
- - 5.8 A
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG(4.5V)
QGS
QGD
VDS=15V, VGS=4.5V,
ID=5.8A
- 5 7.2
- 16 - nC
- 1.9 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=15V, VGS=0V,
f=1MHz
- 420 586
- 65 - pF
- 52 -
Turn-On Time
Turn-Off Time
tD(ON)
tR
tD(OFF)
tF
VDD=15V, VGEN=10V,
RG=3.3Ω
- 2.2 4.4
- 38.7 68.8
nS
- 12.5 25
- 4.8 9.6
NOTE1: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C
NOTE2: The data tested by pulsed, pulse with 300uS, duty cycle 2%
NOTE3: The EAS data show Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH
NOTE4: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
REV1.1
- OCT 2010 RELEASED, JAN 2015 UPDATED -
-4-



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