AGB3303 Datasheet PDF - ANADIGICS

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AGB3303
ANADIGICS

Part Number AGB3303
Description 50 OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
Page 8 Pages


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FEATURES
• DC-4500 MHz Operation Bandwidth
• +39 dBm Output IP3 at 850 MHz
• 4 dB Noise Figure at 850 MHz
• 21 dB Gain at 850 MHz
• +19 dBm P1dB
• SOT-89 Package
• Single +7.5 V to +12 V Supply
• Case Temperature: -40 to +85 °C
APPLICATIONS
• Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
• Fixed Wireless
• MMDS/WLL
• WLAN, HyperLAN
AGB3303
50W High Linearity Low Noise
Wideband Gain Block
Data Sheet - Rev 2.0
S24 Package
SOT-89
PRODUCT DESCRIPTION
The AGB3303 is one of a series of high performance
InGaP HBT amplifiers designed for use in
applications requiring high linearity, low noise and
low distortion. No external matching components
are needed for insertion into a 50W system. With a
high output IP3, low noise figure and wide band
operation, the AGB3303 is ideal for wireless
infrastructure applications such as Cellular Base
Stations, MMDS, and WLL. Offered in a low cost
SOT-89 surface mount package, the AGB3303
requires a single supply voltage, and typically
consumes 0.6 Watts of power using a +8 V supply.
RF Input
Figure 1: Block Diagram
10/2003
RF Output
/ Bias



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AGB3303
GND
4
123
RFIN
GND
RFOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
NAME
DESCRIPTION
1 RFIN RF Input
2
GND
Ground
3
RFOUT
RF Output / Bias
4
GND
Ground
2 Data Sheet - Rev 2.0
10/2003



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ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Device Voltage (VCC)
0 +6 VDC
RF Input Power (PIN)
- +10 dBm
Storage Temperature (TSTG)
-40 +150
°C
Junction Temperature
- +200 °C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
AGB3303
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
Operating Frequency (f) (1)
- - 4500 MHz
Supply Voltage (V )SUPPLY (2)
- +8 - VDC
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Notes:
(1) Operating frequency is defined by the output return loss (S22) having a VSWR less
than 2:1.
(2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other
supply voltages, see the APPLICATION INFORMATION section.
Data Sheet - Rev 2.0
10/2003
3



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AGB3303
Table 4: Electrical Specifications
(TA = +25 °C, VSUPPLY = +8 VDC, 50W system)
PARAMETER
MIN TYP MAX
Gain (S21)
850 MHz 19.0 20.8 21.5
1950 MHz - 18.6 -
2140 MHz - 18.2 -
2450 MHz - 17.6 -
Output IP3 (1)
850 MHz
1950 MHz
2140 MHz
2450 MHz
+35.5
-
-
-
+39.4
+40.2
+41.2
+40.0
-
-
-
-
UNIT
dB
dBm
Output 1dB Compression (P1dB)
850 MHz
1950 MHz
-
-
+19
+19
-
-
dBm
Noise Figure
850 MHz -
4.0 5.5 dB
Thermal Resistance ( UJC) (2)
- 140 - °C/W
Supply Current (ICC)
70 77 90 mA
Notes:
(1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power
per tone.
(2) The value for Thermal Resistance is based on a Device Voltage (VCC) of
+5.0 Volts.
3. Performance as measured on ANADIGICS test fixture (see Figure 3).
V SUPPLY
38 W
Bypass
RF Choke 100 nH
0.01 mF
100 pF
RF
Input
DC Block
0.01 mF
AGB3303
DC Block
VCC
0.01 mF
RF
Output
Figure 3: Application Circuit ( 50W Terminations)
10 pF
4 Data Sheet - Rev 2.0
10/2003



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