AGB3301 Datasheet PDF - ANADIGICS

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AGB3301
ANADIGICS

Part Number AGB3301
Description 50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
Page 16 Pages


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FEATURES
· 250-3000 MHz Frequency Range
· +45 dBm Output IP3
· Low Noise Figure: 2.4 dB at 900 MHz
· 13.5 dB Gain at 900 MHz
· +24 dBm P1dB
· SOT-89 Package
· Single +5V to +9V Supply
· Low Power: less than 1 Watt
· Case Temperature: -40 to +100 oC
APPLICATIONS
· Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
· Fixed Wireless
· MMDS/WLL
· WLAN, HyperLAN
· CATV
AGB3301
50W High Linearity Low Noise
Wideband Gain Block
Data Sheet - Rev 2.0
S24 Package
SOT-89
PRODUCT DESCRIPTION
The AGB3301 is one of a series of GaAs MESFET
amplifiers designed for use in applications
requiring high linearity, low noise and low distortion.
With a high output IP3, low noise figure and wide
band operation, the AGB3301 is ideal for 50W
wireless infrastructure applications such as Cellular
Base Stations, MMDS, and WLL. Offered in a low
cost SOT-89 surface mount package, the AGB3301
requires a single +5V to +9V supply, and typically
consumes less than 1 Watt of power.
RF Input
Figure 1: Block Diagram
06/2003
RF Output
/ Bias



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AGB3301
GND
4
123
RFIN
GND
RFOUT
Figure 2: Pin Out
Table 1: Pin Description
PIN NAME
DESCRIPTION
1 RFIN
2 GND
RF Input
Ground
3 RFOUT
4 GND
RF Output / Bias
Ground
2 Data Sheet - Rev 2.0
06/2003



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ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Device Voltage
0 +12 VDC
RF Input Power
- +15 dBm
Storage Temperature
-40 +150
°C
Channel Temperature
- +150 °C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
AGB3301
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
Operating Frequency: f
250 - 3000 MHz
Device Voltage: VDD
- +9 +10 VDC
Case Temperature: Tc
-40 - +100 oC
The device may be operated safely over these conditions; however,
parametric performance is guaranteed only over the conditions defined
in the electrical specifications.
Data Sheet - Rev 2.0
06/2003
3



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AGB3301
Table 4: Electrical Specifications - Unmatched 50W Test Circuit
(TA = +25 °C, VDD = +9 VDC, f = 900 MHz, see Figure 3)
PARAMETER
MIN TYP MAX UNIT
Gain: S21
12 13.5 15
dB
Input Return Loss: S11
- -15 -10 dB
Output Return Loss: S22
- -15 -10 dB
Output IP3 (1)
+42 +45
-
dBm
Noise Figure
- 2.4 3.5 dB
Output 1dB Compression: P1dB
- +24 - dBm
Thermal Resistance: qJC
Supply Current
- - 40 oC/W
90 110 130 mA
Notes:
(1) OIP3 is measured with two tones: 900 MHz and 901 MHz, +5dBm output per
tone.
VSUPPLY
RF Choke
Bypass
RF
Input
DC Block
DC Block
AGB3301
VDD
RF
Output
Figure 3: Unmatched 50W Test Circuit
4 Data Sheet - Rev 2.0
06/2003



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