ACT108-600E Datasheet PDF - NXP Semiconductors

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ACT108-600E
NXP Semiconductors

Part Number ACT108-600E
Description AC Thyristor power switch
Page 12 Pages


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ACT108-600E
AC Thyristor power switch
Rev. 02 — 21 October 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities
against low and high energy transients
1.2 Features and benefits
„ Exclusive negative gate triggering
„ Full cycle AC conduction
„ Remote gate separates the gate driver
from the effects of the load current
„ Safe clamping of low energy
over-voltage transients
„ Self-protective turn-on during high
energy voltage transients
„ Very high noise immunity
1.3 Applications
„ Fan motor circuits
„ Lower-power highly inductive, resistive
and safety loads
„ Pump motor circuits
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDRM
repetitive peak
off-state voltage
IGT gate trigger current
IT(RMS)
dVD/dt
RMS on-state
current
rate of rise of
off-state voltage
VCL clamping voltage
VPP peak pulse voltage
VT on-state voltage
Conditions
VD = 12 V; IT = 100 mA;
LD+G-; Tj = 25 °C;
see Figure 6
VD = 12 V; IT = 100 mA;
LD- G-; Tj = 25 °C
full sine wave; Tlead 71 °C;
see Figure 1
VDM = 402 V; Tj = 125 °C;
gate open circuit;
see Figure 10
ICL = 100 mA; tp = 1 ms;
Tj 125 °C; see Figure 13
Tj = 25 °C; non-repetitive,
off-state; see Figure 4
IT = 1.1 A; see Figure 9
Min Typ Max Unit
- - 600 V
1-
10 mA
1-
--
1000 -
10 mA
0.8 A
- V/µs
650 -
--
--
-V
2 kV
1.3 V



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NXP Semiconductors
ACT108-600E
AC Thwyrwiswtor. Dpoawtear sSwhiteche t 4 U . c o
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 CM common
2G
gate
3 LD load
3. Ordering information
Simplified outline
321
SOT54 (TO-92)
Graphic symbol
LD
G
CM
001aaj924
Table 3. Ordering information
Type number
Package
Name
Description
ACT108-600E TO-92
plastic single-ended leaded (through hole) package; 3 leads
4. Limiting values
Version
SOT54
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
ITSM
RMS on-state current
non-repetitive peak
on-state current
full sine wave; Tlead 71 °C; see Figure 1
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
see Figure 2 and 3
I2t
dIT/dt
IGM
VGM
PG(AV)
Tstg
Tj
VPP
I2t for fusing
rate of rise of on-state
current
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
tp = 10 ms; sine-wave pulse
IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs
t = 20 μs
positive applied gate voltage
over any 20 ms period
Tj = 25 °C; non-repetitive, off-state; see Figure 4
Min Max Unit
- 600 V
- 0.8 A
- 8.8 A
- 8A
- 0.32 A2s
- 100 A/µs
- 1A
- 15 V
- 0.1 W
-40 150 °C
- 125 °C
- 2 kV
ACT108-600E_2
Product data sheet
Rev. 02 — 21 October 2009
© NXP B.V. 2009. All rights reserved.
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ACT108-600E
AC Thwywriws.tDoartapSohweeetr4Us.wcoitmch
1.0
Ptot
(W)
0.8
0.6
α
α
003aac803
α = 180°
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS) (A)
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
10
ITSM
(A)
8
003aac804
6
4
IT ITSM
2t
1/f
Tj(init) = 25 °C max
0
1
10
102
number of cycles
103
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108-600E_2
Product data sheet
Rev. 02 — 21 October 2009
© NXP B.V. 2009. All rights reserved.
3 of 12



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NXP Semiconductors
103
ITSM
(A)
102
10
ACT108-600E
AC Thwywriws.tDoartapSohweeetr4Us.wcoitmch
003aac805
IT ITSM
t
tp
Tj(init) = 25 °C max
1
105
104
103
tp (s)
102
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 μs/50 μs waveform
RGen
2Ω
Surge pulse
RL
150 Ω
5 μH
Load Model
RG
220 Ω
DUT
003aad077
Fig 4. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108-600E_2
Product data sheet
Rev. 02 — 21 October 2009
© NXP B.V. 2009. All rights reserved.
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