903BDG Datasheet PDF - Niko-Sem

No Preview Available ! NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 9.5m ID 50A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VGS ID IDM IAR EAS EAR PD Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA Case-to-Heatsink RθCS 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1 TYPICAL 0.6 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 50 35 200 40 250 8.6 50 30 -55 to 150 275 UNITS V A mJ W °C MAXIMUM 2.5 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C LIMITS UNIT MIN TYP MAX 25 1 1.6 3 V ±250 nA 25 µA 250 1 SEP-24-2004

No Preview Available ! NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 4.5V, ID = 20A VGS = 10V, ID = 25A VDS = 10V, ID = 25A 50 A 11 16 m 7.5 9.5 32 S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 15V, f = 1MHz VDS = 10V, VGS = 10V, ID = 25A VDS = 15V, RL = 1 ID ≅ 50A, VGS = 10V, RGEN = 24 1200 1800 600 1000 pF 350 500 25 50 15 10 nC 6 16 120 250 40 90 nS 105 200 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current3 Forward Voltage1 IS ISM VSD IS = 25A, VGS = 0V Reverse Recovery Time trr Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 . 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 50 150 0.9 1.3 70 200 0.043 A V nS A µC REMARK: THE PRODUCT MARKED WITH “P0903BDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 SEP-24-2004

No Preview Available ! NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor TYPICAL CHARACTERISTICS P0903BDG TO-252 (DPAK) Lead-Free 3 SEP-24-2004

No Preview Available ! NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free 4 SEP-24-2004

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