NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BDG
TO-252 (DPAK)
Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 25A
VDS = 10V, ID = 25A
50 A
11 16
m
7.5 9.5
32 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 10V, VGS = 10V,
ID = 25A
VDS = 15V, RL = 1
ID ≅ 50A, VGS = 10V, RGEN = 24
1200 1800
600 1000 pF
350 500
25 50
15
10
nC
6 16
120 250
40 90
nS
105 200
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IS = 25A, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
50
150
0.9 1.3
70
200
0.043
A
V
nS
A
µC
REMARK: THE PRODUCT MARKED WITH “P0903BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 SEP-24-2004