9015W Datasheet PDF - BLUE ROCKET ELECTRONICS

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9015W
BLUE ROCKET ELECTRONICS

Part Number 9015W
Description Silicon PNP transistor
Page 6 Pages


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9015W
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package.

特征 / Features
PC 大,hFE 高且特性好,与 9014W 互补。
Hig PC and IC, excellent hFE linearity, complementary pair with 9014W.
用途 / Applications
用于低电平、低噪声的前置放大器。
Low frequency, low noise pre-amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
21
PIN1Emitter
PIN 2Base PIN 3Collector
印章代码 / Marking
hFE Classifications
Symbol
hFE Range
Marking
A
60150
HM6A
B
100300
HM6B
C
200600
HM6C
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9015W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
250
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-0.1mA IE=0
VCEO IC=-1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=-50V IE=0
Emitter Base Cut-Off Current
IEBO VEB=-5.0V IC=0
DC Current Gain
hFE VCE=-5.0V IC=-1.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA IB=-5.0mA
Base-Emitter Saturation Voltage
VBE(sat) IC=-100mA IB=-5.0mA
Collector-Emitter Voltage
VBE VCE=-5.0V IC=-2.0mA
Transition Frequency
Output Capacitance
Noise Figure
fT VCE=-5.0V IC=-10mA
Cob
VCB=-10V
f=1.0MHz
IE=0
VCE=-5.0V IC=-0.2mA
NF Rg=2.0Kf=1.0KHz
Δf=200Hz
最小值 典型值 最大值 单位
Min Typ Max Unit
-50 V
-45 V
-5.0 V
-0.05 μA
-0.05 μA
60 600
-0.2 -0.7 V
-0.82 -1.0 V
-0.65 -0.75 V
100 190
MHz
4.5 7.0 pF
0.7 10 dB
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9015W
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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9015W
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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