8050C Datasheet PDF - SEMTECH


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8050C
SEMTECH

Part Number 8050C
Description NPN Silicon Epitaxial Planar Transistor
Page 2 Pages

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ST 8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into two groups, C and
D, according to its DC current gain. As
complementary type the PNP transistor ST 8550 is
recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
25
40
6
1
1.5
100
1
150
-55 to +150
Unit
V
V
V
A
A
mA
W
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®



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ST 8050 (1.5A)
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=1V, IC=5mA
at VCE=1V, IC=100mA
at VCE=1V, IC=800mA
Collector Cutoff Current
at VCB=35V
Emitter Cutoff Current
at VBE=6V
Collector Saturation Voltage
at IC=800mA, IB=80mA
Base Saturation Voltage
at IC=800mA, IB=80mA
Collector Emitter Breakdown Voltage
at IC=2mA
Collector Base Breakdown Voltage
at IC=100µA
Emitter Base Breakdown Voltage
at IE=100µA
Base Emitter Voltage
at IC=10mA, VCE=1V
Gain Bandwidth Product
at VCE=10V, IC=50mA
Collector Base Capacitance
at VCB=10V, f=1MHz
Symbol
8050C
8050D
hFE
hFE
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
V(BR)CEO
V(BR)CBO
V(BR)EBO
VBE
fT
COB
Min.
45
120
160
40
-
-
-
-
25
40
6
-
120
-
G S P FORM A IS AVAILABLE
Typ.
170
-
-
80
-
-
0.28
0.98
-
-
-
0.66
200
15
Max.
-
200
300
-
100
100
0.5
1.2
-
-
-
1
-
-
Unit
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002




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