7WBD3306 Datasheet PDF - ON Semiconductor

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7WBD3306
ON Semiconductor

Part Number 7WBD3306
Description 2-Bit Translating Bus Switch
Page 13 Pages


7WBD3306 datasheet pdf
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7WBD3306
2-Bit Translating Bus
Switch
The 7WBD3306 is an advanced high−speed low−power 2−bit
translating bus switch in ultra−small footprints.
Features
High Speed: tPD = 0.25 ns (Max) @ VCC = 4.5 V
3 W Switch Connection Between 2 Ports
Power Down Protection Provided on Inputs
Zero Bounce
TTL−Compatible Control Inputs
Ultra−Small Pb−Free Packages
These are Pb−Free Devices
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
http://onsemi.com
8
1
UDFN8
MU SUFFIX
CASE 517AJ
MARKING
DIAGRAMS
AHM
G
18
UDFN8
1.95 x 1.0
CASE 517CA
1
XM
8
Micro8]
DM SUFFIX
CASE 846A
D125
AYWG
G
1
UQFN8
MU SUFFIX
CASE 523AN
1
AH M*G
G
US8
US SUFFIX
CASE 493
8
AF M*G
G
1
8
TSSOP8
DT SUFFIX
CASE 948AL
AAE
YWW-
A
G
1
A = Assembly Location
Y = Year
W = Work Week
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
7WBD3306/D



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7WBD3306
OE1 1
8 VCC
A1 2
7 OE2
B1 3
6 B2
GND 4
5 A2
Figure 1. UDFN8
(Top Thru−View)
OE1 A1 B1
7 65
VCC
8
4 GND
1 23
OE2 B2 A2
Figure 2. UQFN8
(Top Thru−View)
OE1
A1
B1
GND
1
2
3
4
8 VCC
7 OE2
6 B2
5 A2
Figure 3. US8/Micro8/TSSOP8
(Top View)
A1 B1 FUNCTION TABLE
OE1
Input OEn
L
A2 B2 H
OE2
Figure 4. Logic Diagram
Function
Bn = An
Disconnect
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7WBD3306
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VI/O
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
qJA
DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Control Pin DC Input Diode Current
Switch I/O Port DC Diode Current
ON−State Switch Current
Continuous Current Through VCC or GND
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
VIN < GND
VI/O < GND
US8 (Note 1)
UDFN8
UQFN8
Micro8
TSSOP8
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−50
−50
$128
$150
$150
$150
−65 to +150
260
150
251
111
208
392
150
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
PD Power Dissipation in Still Air at 85°C
US8
UDFN8
UQFN8
Micro8
TSSOP8
498
1127
601
319
833
mW
MSL
Moisture Sensitivity
Level 1
FR
VESD
Flammability Rating Oxygen Index: 28 to 34
ESD Withstand Voltage
Human Body Mode (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP
Latchup Performance Above VCC and Below GND at 125°C (Note 5)
$200
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC
VIN
VI/O
TA
Dt / DV
Positive DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
4.0 5.5 V
0 5.5 V
0 5.5 V
−55
+125
°C
0 5 nS/V
0 DC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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7WBD3306
DC ELECTRICAL CHARACTERISTICS
Symbol
VIK
VIH
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Conditions
II/O = −18 mA
VCC
(V)
4.5
4.0 to
5.5
TA = 255C
Min Typ Max
−1.2
2.0
TA =
−555C to +1255C
Min Max
−1.2
2.0
Unit
V
V
VIL Low−Level Input Voltage
(Control)
4.0 to
5.5
0.8 0.8 V
VOH Output Voltage High
IIN Input Leakage Current
IOFF Power Off Leakage Current
ICC Quiescent Supply Current
DICC
Increase in Supply Current
(Control Pin)
See Figure 5
0 v VIN v 5.5 V
VI/O = 0 to 5.5 V
IO = 0,
VIN = VCC or 0 V
OE1 = OE2 = GND
OE1 = OE2 = VCC
One input at 3.4 V;
Other inputs at VCC
or GND
5.5
0
5.5
5.5
±0.1 ±1.0 mA
±0.1 ±1.0 mA
±1.0 ±1.0 mA
±0.1 ±1.0 mA
2.5 mA
RON
Switch ON Resistance
VI/O = 0,
II/O = 64 mA
II/O = 30 mA
4.5
37
37
W
7
7
VI/O = 2.4,
II/O = 15 mA
15 50
50
VI/O = 2.4,
II/O = 15 mA
4.0
50 70
70
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
Symbol
tPD
Parameter
Propagation Delay, Bus to Bus
tEN Output Enable Time
Test Condition
See Figure 6
See Figure 6
tDIS Output Disable Time
CIN
CIO(ON)
CIO(OFF)
Control Input Capacitance
Switch On Capacitance
Switch Off Capacitance
VIN = 5 or 0 V
Switch ON
Switch OFF
VCC
(V)
4.0 to
5.5
4.5 to
5.5
4.0
4.5 to
5.5
4.0
5.0
5.0
5.0
TA = 25 5C
Min Typ Max
0.25
0.8 2.5 4.2
0.8 3.0
0.8 3.0
4.6
4.8
0.8 2.9
2.5
10
5
4.4
TA =
−555C to +1255C
Min Max
0.25
Unit
ns
0.8 4.2 ns
0.8 4.6
0.8 4.8 ns
0.8 4.4
pF
pF
pF
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