7MBR50VN120-50 Datasheet PDF - Fuji Electric

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7MBR50VN120-50
Fuji Electric

Part Number 7MBR50VN120-50
Description IGBT MODULE
Page 8 Pages


7MBR50VN120-50 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
7MBR50VN120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 50A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Storage temperature
Tc
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw torque Mounting (*3)
-
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Continuous
1ms
1 device
Tc=80°C
Tc=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
AC : 1min.
M5
Maximum
ratings
1200
±20
50
100
50
100
280
1200
±20
35
70
210
1200
1600
50
360
648
175
150
150
150
125
-40~+125
2500
3.5
Units
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1



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7MBR50VN120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE (sat)
(terminal)
VCE (sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
(chip)
IRRM
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 50mA
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 50A
VGE = +15 / -15V
RG = 15Ω
IF = 50A
IF = 50A
IF = 50A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE = +20 / -20V
VGE = 15V
IC = 35A
VGE = 15V
IC = 35A
VCE = 600V
IC = 35A
VGE = +15 / -15V
RG = 27Ω
VR = 1200V
IF = 50A
VR = 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
terminal
chip
Characteristics
min. typ. max.
- - 1.0
- - 200
6.0 6.5 7.0
- 2.20 2.65
- 2.55 -
- 2.60 -
- 1.85 2.30
- 2.20 -
- 2.25 -
- 4.2 -
- 0.39 1.20
- 0.09 0.60
- 0.03 -
- 0.53 1.00
- 0.06 0.30
- 2.05 2.50
- 2.20 -
- 2.15 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- - 0.35
- - 1.0
Units
mA
nA
V
V
nF
µs
V
µs
mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
-
2.10
2.45
2.50
1.85
2.20
2.25
0.39
0.09
0.53
0.06
-
1.70
1.35
-
5000
495
3375
200
2.55
-
-
2.30
-
-
1.20
0.60
1.00
0.30
1.00
2.15
-
1.0
-
520
3450
nA
V
µs
mA
V
mA
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.54
- - 0.73
- - 0.72
- - 0.54
- 0.05 -
Units
°C/W
2



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7MBR50VN120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
100
VGE=20V
15V
12V
75
50 10V
25
8V
0
012345
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
100
Tj=25°C
Tj=150°C
75
Tj=125°C
50
25
0
012345
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
10.0
Cies
1.0
Cres
Coes
0.1
0.0
0
10 20
Collector - Emitter voltage: VCE [V]
30
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
100
VGE=20V
15V
12V
75
50
10V
25
0
0
8V
1234
Collector-Emitter voltage: VCE[V]
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2
Ic=100A
Ic=50A
Ic=25A
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600VIc=50ATj= 25°C
VGE
VCE
0 100V 200 300 400 500
Gate charge: Qg [nC]



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7MBR50VN120-50
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=15Ω, Tj= 125°C
10000
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=15Ω, Tj= 150°C
10000
1000
100
toff
ton
tr
tf
1000
100
toff
ton
tr
tf
10
0
25 50 75 100
Collector current: IC [A]
125
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
10000
1000
100
toff
ton
tr
tf
10
10
Gate resistance : RG []
100
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V
10
8 Eon(150°C)
Eon(125°C)
6 Eoff(150°C)
Eoff(125°C)
4
Err(125°C)
Err(150°C)
2
0
10
100
Gate resistance : RG []
4
10
0
25 50 75 100
Collector current: IC [A]
125
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=15Ω
15
Eon(150°C)
Eon(125°C)
10 Eoff(150°C)
Eoff(125°C)
5 Err(150°C)
Err(125°C)
0
0 25 50 75 100 125 150
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 15Ω, Tj=150°C
125
100
75
RBSOA
50 (Repetitive pulse)
25
0
0 400 800 1200
Collector-Emitter voltage : VCE [V]



7MBR50VN120-50 datasheet pdf
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7MBR50VN120-50 pdf
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7MBR50VN120-50 pdf

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