6N80 Datasheet PDF - UTC

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6N80
UTC

Part Number 6N80
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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6N80
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 800V N-CHANNEL
POWER MOSFET
1
„ DESCRIPTION
The UTC 6N80 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 6N80 is universally applied in high efficiency switch
mode power supply.
1
1
Power MOSFET
TO-220
TO-220F
TO-220F1
„ FEATURES
* RDS(on) = 2.0@VGS = 10 V
* Improved dv/dt capability
* Fast switching
* 100% avalanche tested
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N80L-TA3-T
6N80G-TA3-T
6N80L-TF3-T
6N80G-TF3-T
6N80L-TF1-T
6N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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6N80
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800 V
Gate-Source Voltage
VGSS
±30 V
Drain Current (Note 1)
Continuous
Pulsed
ID 6 A
IDM 22 A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAS
EAR
dv/dt
680 mJ
15.8 mJ
4.5 V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
PD
138 W
51 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 37mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 5.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
0.9
2.45
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N80
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
ID=250µA, VGS=0V
BVDSS/TJ Reference to 25°C, ID=250µA
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VDS=50V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=640V, ID=6A
(Note 1, 2)
VDD=400V, ID=6A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=6A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=6A, VGS=0V,
QRR dIF/dt=100A/µs (Note 1)
Note: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800 V
0.97 V/°C
10
100
µA
100 nA
-100 nA
3.0 5.0
1.6 2.0
5.4
V
S
1010 1310 pF
90 115 pF
8 11 pF
21 30 nC
6 nC
9 nC
26 60 ns
65 140 ns
47 105 ns
44 90 ns
6A
22 A
1.4 V
615 ns
5.4 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N80
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
Power MOSFET
3mA
12V
200nF
50k
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Test Circuit
VGS
10V
VDS
QGS
QG
QGD
Charge
Gate Charge Waveforms
Resistive Switching Test Circuit
10V
tP
VDS
RG ID
L
DUT
VDD
Unclamped Inductive Switching Test Circuit
Resistive Switching Waveforms
BVDSS
IAS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDS(t)
tP Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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