6N50 Datasheet PDF - UTC

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6N50
UTC

Part Number 6N50
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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6N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6A, 500V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 6N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 6N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
„ FEATURES
* VDS = 500V
* ID = 6A
* RDS(ON)=1.15@ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
„ SYMBOL
2.Drain
1 TO-220
1
TO-220F
1.Gate
3.Source
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N50L-TA3-T
6N50G-TA3-T
6N50L-TF3-T
6N50G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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6N50
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
500 V
±30 V
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
ID
6 (Note 2)
A
IDM
24 (Note 2)
A
IAR 6 A
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
EAS
EAR
dv/dt
270 mJ
20 mJ
4.5 V/ns
Power Dissipation (TC=25°C)
Derate above 25°C
TO-220
TO-220F
TO-220
TO-220F
PD
89
31
W
0.71
0.24
W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =13mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C
5. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
1.4
4.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N50
Preliminary
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=6A
(Note 1, 2)
VDD=250V, ID=6A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR IS=6A, VGS=0V, dIF/dt=100A/µs
QRR (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500 V
10 µA
+100 nA
-100 nA
2.0 4.0 V
0.95 1.15
720 960
85 115
6.3 10
pF
pF
pF
15 20 nC
4.5 nC
6 nC
17 45 ns
30 70 ns
35 80 ns
20 50 ns
6
24
1.5
85
0.15
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N50
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Gate Charge Test Circuit
12V
200nF
50k
VGS
300nF
Same Type
as DUT
Gate Charge Waveforms
VGS
QG
10V
VDS
QGS
QGD
3mA
DUT
Charge
Unclamped Inductive Switching Test Circuit
VDS
RG ID
L
10V
tP
DUT
VDD
Unclamped Inductive Switching Waveforms
BVDSS
IAS
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDD VDS(t)
tP Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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