6MBI450V-170-50 Datasheet PDF - Fuji Electric

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6MBI450V-170-50
Fuji Electric

Part Number 6MBI450V-170-50
Description IGBT Module
Page 7 Pages


6MBI450V-170-50 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
6MBI450V-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 450A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Conditions
Continuous
TC=25°C
TC=100°C
Maximum
ratings
1700
±20
600
450
Units
V
V
Collector current
IC pulse
1ms
900 A
-IC
-IC pulse
1ms
450
900
Collector power dissipation
Junction temperature
PC 1 device
Tj
2500
175
W
Operating junction temperature
(under switching conditions)
Tjop
150 °C
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
Between terminal and copper base (*1)
Between thermistor and others (*2)
Viso
Screw torque
Mounting (*3)
Terminals (*4)
-
-
AC : 1min.
125
-40 ~ 125
3400
3.5
4.5
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Note *4: Recommendable Value : 3.5-4.5 Nm (M6)
1 7865
FEBRUARY 2013



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6MBI450V-170-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 450mA
VGE = 15V
IC = 450A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 450A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 450A
VGE = ±15V
RG = 3.3Ω
LS = 80nH
VGE = 0V, IF = 450A
VGE = 0V, IF = 450A
IF = 450A
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 2.65 3.10
- 3.10 -
- 3.15 -
- 2.00 2.45
- 2.45 -
- 2.50 -
- 1.67 -
- 40 -
- 900 -
- 400 -
- 100 -
- 1300 -
- 100 -
- 2.45 2.90
- 2.75 -
- 2.70 -
- 1.80 2.25
- 2.10 -
- 2.05 -
- 250 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*5)
Rth(c-f)
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.06
- - 0.10
- 0.0167 -
Units
°C/W
Equivalent Circuit Schematic
2



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6MBI450V-170-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
VGE=20V 15V
12V
800
600
10V
400
200
8V
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1000
Tj=125
800
600
Tj=25
400
Tj=150
200
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Gate Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
100
Cies
10
Coes
Cres
1
0 10 20 30
Collector - Emitter voltage: VCE [V]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
VGE= 20V 15V
800 12V
600
10V
400
200
8V
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
IC=900A
2 IC=450A
IC=225A
0
5
20
10 15 20
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
VCC=900V, IC=450A,Tj= 25°C
15
VCE
10
5
0
-5
VGE
-10
-15
-20
-5000
-2500
0
2500
Gate charge: QG [nC]
25
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
5000



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6MBI450V-170-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj= 25°C
10000
1000
100
toff
ton
tr
tf
10
0
200 400 600 800
Collector current: IC [A]
1000
[ Inverter ]
Switching time vs. Gate resistance (typ.)
VCC=900V, IC=450A, VGE=±15V, Tj= 125°C, 150°C
10000
Tj=125 oC
Tj=150 oC
toff
ton
tr
1000
tf
100
10
1
10
Gate resistance : RG [Ω]
100
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
VCC=900V, IC=450A, VGE=±15V, Tj=125°C, 150°C
600
Tj=125 oC
500 Tj=150 oC
Eon
400
300
Eoff
200
100
0
1
Err
10
Gate resistance : RG [Ω]
100
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj= 125°C, 150°C
10000
Tj=125 oC
Tj=150 oC
toff
1000
ton tr
100 tf
10
0
200 400 600 800
Collector current: IC [A]
1000
[ Inverter ]
Switching loss vs. Collector current (typ.)
VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C
400
Tj=125 oC
Tj=150 oC
300
Eon
200
Eoff
100
Err
0
0 200 400 600 800 1000
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE 15V, RG 3.3Ω ,Tj = 150°C
1200
1000
800
600 Switching characteristics of VCE is
defined between Sense C1,3,5 and
400
Sense E1,3,5 for Upper arm(U,V,W)
and Sense E1,3,5 and Sense E2,4,6
for Lower arm(X,Y,Z) .
200
0
0
500
1000
1500
2000
Collector-Emitter voltage : VCE [V]
(sense terminals)
4



6MBI450V-170-50 datasheet pdf
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