6MBI225V-120-50 Datasheet PDF - Fuji Electric

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6MBI225V-120-50
Fuji Electric

Part Number 6MBI225V-120-50
Description IGBT Module
Page 6 Pages


6MBI225V-120-50 datasheet pdf
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6MBI225V-120-50
IGBT MODULE (V series)
1200V / 225A / 6 in one package
http://www.fujisemi.com
IGBT Modules
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbols
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Conditions
Continuous
1ms
1ms
Tc=80°C
Tc=80°C
Maximum
ratings
1200
±20
225
450
225
450
Units
V
V
A
Collector power dissipation
Junction temperature
Pc 1 device
Tj
1070
175
W
Operation temperature
Storage temperature
Top
Tstg
150
-40 to +125
°C
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque
Mounting (*3)
Terminals (*4)
-
-
3.5
4.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Note *4: Recommendable value : 3.5-4.5 Nm (M6)
1



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6MBI225V-120-50
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols Conditions
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 225mA
VGE = 15V
IC = 225A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 225A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 225A
VGE = +15V
RG = 1.6Ω
VGE = 0V
IF = 225A
VGE = 0V
IF = 225A
IF = 225A
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)(*5)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*6)
Rth(c-f) with Thermal Compound
Note *5: This value is including margins. This will be revised in future.
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
http://www.fujisemi.com
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 2.20 2.65
- 2.55 -
- 2.60 -
- 1.85 2.30
- 2.20 -
- 2.25 -
- 18 -
- 550 1200
- 180 600
- 120 -
- 1050 2000
- 110 350
- 2.05 2.50
- 2.20 -
- 2.15 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- 200 600
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Characteristics
min. typ. max.
- - 0.14
- - 0.19
- 0.0167 -
Units
°C/W
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
2



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6MBI225V-120-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
500
15V
400 Vge=20V
12V
300
200
100
0
0
10V
8V
1234
Collector-Emitter voltage: Vce [V]
5
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
500
125°C
400
300 Tj=25°C
150°C
200
100
0
012345
Collector-Emitter Voltage: Vce [V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
Coes
1
Cres
0.1
0
10 20 30
Collector-Emitter voltage: Vce [V]
3
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
500
15V
400 Vge= 20V
12V
300
200
100
0
0
10V
8V
1234
Collector-Emitter voltage: Vce [V]
5
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
2
Ic=450A
Ic=225A
Ic=112A
0
5 10 15 20 25
Gate-Emitter Voltage: Vge [V]
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=225A, Tj= 25°C
Vge Vce
0
500
1000
1500
2000
Gate charge: Qg [nC]



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6MBI225V-120-50
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=1.6, Tj=25°C
10000
1000
100
toff
ton
tr
tf
10
0
100 200 300 400
Collector current: Ic [A]
500
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=25°C
10000
1000
100
toff
ton
tr
tf
10
0.1
1 10
Gate resistance: Rg []
100
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C
150
Tj=125oC
Tj=150oC
Eon
100
Eoff
50
Err
0
0 1 10 100
Gate resistance: Rg []
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=1.6, Tj=125°C, 150°C
10000
Tj=125oC
Tj=150oC
1000
toff
ton
tr
100 tf
10
0
100 200 300 400
Collector current: Ic [A]
500
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=1.6, Tj=125°C, 150°C
80
Tj=125oC
Tj=150oC
60
Eoff
40
20
0
0
Err
Eon
100 200 300 400
Collector current: Ic [A]
500
[INVERTER]
Reverse bias safe operating area (max.)
+Vge=15V, -Vge15V, Rg1.6, Tj=150°C
800
600
400
200
0
0
500
1000
1500
Collector-Emitter voltage: Vce [V]
4



6MBI225V-120-50 datasheet pdf
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6MBI225V-120-50 pdf
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6MBI225V-120-50 pdf

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