6MBI180VB-120-55 Datasheet PDF - Fuji Electric

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6MBI180VB-120-55
Fuji Electric

Part Number 6MBI180VB-120-55
Description IGBT Module
Page 6 Pages


6MBI180VB-120-55 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
6MBI180VB-120-55
IGBT Modules
IGBT MODULE (V series)
1200V / 180A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Conditions
Continuous
TC=80°C
Maximum
ratings
1200
±20
150
Units
V
V
Collector current
IC pulse
-IC
1ms
TC=80°C
400
150
A
Collector power dissipation
-IC pulse
PC
1ms
1 device
400
1075
W
Junction temperature
Tj
175
Operating junciton temperature
(under switching conditions)
Tjop
150 °C
Case temperature
TC
125
Storage temperature
Tstg
-40 ~ +125
Isolation voltage
Between terminal and copper base (*1)
Between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque Mounting (*3)
- M5
3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1



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6MBI180VB-120-55
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
VGE = 15V
IC = 200A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 200A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 200A
VGE = +15 / -15V
RG = 1.2Ω
IF = 200A
IF = 200A
IF = 200A
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 1.0
- - 200
6.0 6.5 7.0
- 2.70 3.15
- 3.05 -
- 3.10 -
- 1.85 2.30
- 2.20 -
- 2.25 -
- 3.8 -
- 16.5 -
- 0.39 1.20
- 0.09 0.60
- 0.03 -
- 0.53 1.00
- 0.06 0.30
- 2.55 3.00
- 2.70 -
- 2.65 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- - 0.35
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.14
- - 0.25
- 0.05 -
Units
°C/W
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
30,31 ,32
1
2
3
4
33,34 ,35
5
6
U
27,28 ,29
7
8
9
10
V
24,25 ,26
11
12
16,17 ,18
19
20
W
21,22 ,23
13,14 ,15
2



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6MBI180VB-120-55
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
400
VGE=20V
12V
300
15V
200
10V
100
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400
Tj=25°C 125°C 150°C
300
200
100
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
10.0
Cies
1.0 Coes
Cres
0.1
0
10 20 30 40
Collector - Emitter voltage: VCE [V]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
400
VGE=20V
15V
12V
300
200 10V
100
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
8
6
4
IC=400A
2 IC=200A
IC= 100A
0
5 10 15 20
Gate - Emitter voltage: VGE [V]
25
[ Inverter ]
Dynamic gate charge (typ.)
VCC=600V, IC=200A,Tj= 25°C
VCE
VGE
0
-2000
0
Gate charge: QG [nC]
2000



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6MBI180VB-120-55
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.2Ω, Tj= 125°C
10000
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.2Ω, Tj= 150°C
10000
1000
100
toff
ton
tr
tf
10
0
100 200 300 400
Collector current: IC [A]
500
[ Inverter ]
Switching time vs. gate resistance (typ.)
VCC=600V, IC=200A, VGE=±15V, Tj= 125°C
10000
1000
100
toff
ton
tr
tf
10
0.1
1.0 10.0
Gate resistance : RG [Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
VCC=600V, IC=200A, VGE=±15V
50
40
30
20
10
0
0
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
1 10
Gate resistance : RG [Ω]
100
4
1000
100
toff
ton
tr
tf
10
0 100 200 300 400 500
Collector current: IC [A]
[ Inverter ]
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.2Ω
50
Eon(150°C)
Eon(125°C)
40 Eoff(150°C)
Eoff(125°C)
30
20 Err(150°C)
Err(125°C)
10
0
0 50 100 150 200 250 300 350 400 450 500 550
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.2Ω ,Tj <= 150°C
500
400
300 RBSOA
(Repetitive pulse)
200
100
0
0 200 400 600 800 1000 1200 1400 1600
Collector-Emitter voltage : VCE [V]
(Main terminals)



6MBI180VB-120-55 datasheet pdf
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6MBI180VB-120-55 pdf
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