6MBI150VX-060-50 Datasheet PDF - Fuji Electric

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6MBI150VX-060-50
Fuji Electric

Part Number 6MBI150VX-060-50
Description IGBT Module
Page 6 Pages


6MBI150VX-060-50 datasheet pdf
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6MBI150VX-060-50
IGBT MODULE (V series)
600V / 150A / 6 in one package
IGBT Modules
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Tc=80°C
Maximum
ratings
600
±20
150
Units
V
V
Collector current
Icp 1ms Tc=80°C
-Ic
300
150
A
-Ic pulse
1ms
300
Collector power dissipation
Pc 1 device
485 W
Junction temperature
Tj
175
Operating junciton temperature
(under switching conditions)
Tjop
150 °C
Case temperature
Tc
125
Storage temperature
Tstg
-40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque Mounting (*3)
- M5
3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1



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6MBI150VX-060-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 600V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 150mA
VGE = 15V
IC = 100A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 150A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V
IC = 150A
VGE = +15 / -15V
RG = 9Ω
IF = 150A
IF = 150A
IF = ±20
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*4)
Rth(c-f) with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 200
6.2 6.7 7.2
- 2.40 2.85
- 2.70 -
- 2.90 -
- 1.60 2.05
- 1.90 -
- 2.10 -
- 9.7 -
- 0.39 1.20
- 0.09 0.60
- 0.03 -
- 0.53 1.00
- 0.06 0.30
- 2.40 2.85
- 2.30 -
- 2.30 -
- 1.60 2.05
- 1.50 -
- 1.47 -
- - 0.35
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Characteristics
min. typ. max.
- - 0.31
- - 0.60
- 0.05 -
Units
°C/W
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
2



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6MBI150VX-060-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
300
VGE=20V
12V
15V
200
10V
100
8V
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
300
Tj=25°C
150°C
125°C
200
100
0
01234
Collector-Emitter voltage: VCE [V]
5
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
100.0
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
300
VGE=20V
15V
12V
200
10V
100
8V
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2 Ic=300A
Ic=150A
Ic= 75A
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=150A, Tj= 25°C
10.0
Cies
1.0
Coes
Cres
0.1
0
10 20 30 40
Collector - Emitter voltage: VCE [V]
3
VGE
VCE
0 200 400 600 800 1000
Gate charge: Qg [nC]



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6MBI150VX-060-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 125°C
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 150°C
10000
1000
100
toff
tr
ton
tf
10
0
100 200 300
Collector current: IC [A]
400
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
10000
toff
ton
tr
1000
100 tf
10
1.0
10.0 100.0
Gate resistance : Rg [Ω]
1000.0
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=300V, Ic=150A, VGE=±15V
40
Eoff(150°C)
30 Eoff(125°C)
20
10
0
1
Eon(150°
Eon(125°C)
Err(150°C)
Err(125°C)
10 100
Gate resistance : Rg [Ω]
1000
1000
ton
tr
toff
100
tf
10
0 100 200 300 400
Collector current: IC [A]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9Ω
12
Eon(150°C)
10 Eon(125°C)
Eoff(150°C)
8 Eoff(125°C)
6
4
2 Err(150°C)
Err(125°C)
0
0 50 100 150 200 250 300
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9Ω ,Tj <= 125°C
400
300
200
RBSOA
100 (Repetitive pulse)
0
0 100 200 300 400 500 600 700 800
Collector-Emitter voltage : VCE [V]
4



6MBI150VX-060-50 datasheet pdf
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