6MBI100U4B-170 Datasheet PDF - Fuji Electric

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6MBI100U4B-170
Fuji Electric

Part Number 6MBI100U4B-170
Description IGBT Module
Page 13 Pages


6MBI100U4B-170 datasheet pdf
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SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 6MBI100U4B-170
Spec. No. :
MS5F 6304
July 15 05 S.Miyashita
July 15 05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6304
1
13
H04-004-07b



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Revised Records
Date
Classi-
fication
Ind.
July.-15 -05 Enactment
Content
Applied
date
Drawn
Checked Checked Approved
Issued
date
T.Miyasaka K.Yamada Y.Seki
MS5F6304
2
13
H04-004-06b



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1. Outline Drawing ( Unit : mm )
6MBI100U4B-170
2. Equivalent circuit
30,31 ,32
1
2
3
4
33,34 ,35
5
6
U
27,28 ,29
7
8
shows theoretical dimension.
( ) shows reference dimension.
9
10
V
24,25 ,26
11
12
16,17 ,18
19
20
W
21,22 ,23
13,14 ,15
MS5F6304
3
13
H04-004-03a



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3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
It em s
Sym bols
Con di t i on s
Maxi m u m
Rat i n gs
Uni t s
Collector-Emitter voltage
VCES
1700
V
Gate-Emitter voltage
VGES
±20 V
Collector current
Ic Continuous Tc=25°C
Tc=80°C
Icp 1ms
Tc=25°C
Tc=80°C
-Ic
150
100
300
200
100
A
-Ic pulse 1ms
200
Collector Power Dissipation
Pc 1 device
520 W
Junction temperature
Storage temperature
Tj
Tstg
150
-40 ~ +125
°C
Isolation between terminal and copper base (*1)
voltage between thermistor and others (*2)
Viso AC : 1min.
3400
VAC
Screw
Torque
Mounting (*3)
-
3.5 N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Symbols
Co n d i t i o n s
Zero gate voltage
Collector current
ICES
VGE = 0V
VCE = 1700V
Gate-Emitter
leakage current
IGES
VCE = 0V
VGE=±20V
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
VCE = 20V
Ic = 100mA
VGE=15V
Ic = 100A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz
Turn-on time
ton Vcc = 900V
tr Ic = 100A
tr (i) VGE=±15V
Turn-off time
toff Rg = 4.7 Ω
tf
Forward on voltage
VF
(terminal)
VF
(chip)
VGE=0V
IF = 100A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Reverse recovery time
trr IF = 100A
Lead resistance,
terminal-chip(*4)
R lead
Resistance
B value
R
T = 25°C
T =100°C
B T = 25/50°C
(*4) Biggest internal terminal resistance among arm.
Ch ar ac t er i st i cs
min. typ. max.
- - 1.0
- - 200
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
6.5
2.60
3.00
2.25
2.65
9
0.62
0.39
0.05
0.55
0.09
2.15
2.35
1.80
2.00
-
3.40
5000
495
3375
8.5
2.75
-
2.40
-
-
1.20
0.60
-
1.50
0.30
2.50
-
2.15
-
0.6
-
-
520
3450
Units
mA
nA
V
V
nF
μs
V
μs
mΩ
Ω
K
MS5F6304
4
13
H04-004-03a



6MBI100U4B-170 datasheet pdf
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6MBI100U4B-170 pdf
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