60N06 Datasheet PDF - UTC

www.Datasheet-PDF.com

60N06
UTC

Part Number 60N06
Description N-CHANNEL POWER MOSFET
Page 8 Pages


60N06 datasheet pdf
View PDF for PC
60N06 pdf
View PDF for Mobile


No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
60N06
60A, 60V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The U TC 60N06 is N-c hannel en hancement mod e po wer
field effect transistors with stable off-stat e charact eristics, fast
switching speed, lo w thermal resistance, usually used at telecom
and computer application.
„ FEATURES
* RDS(ON) = 18m@VGS = 10 V
* Ultra low gate charge ( typical 39nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
60N06L-TA3-T 60N0
6G-TA3-T
TO-220
60N06L-TF3-T 60N0
6G-TF3-T
TO-220F
60N06L-TQ2-R 60N0
6G-TQ2-R
TO-263
60N06L-TQ2-T 60N0
6G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd.
1 of 8
QW-R502-121.C
http://www.Datasheet4U.com



No Preview Available !

60N06
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS 60
VGS
±20 V
V
Continuous Drain Current
TC = 25°C
TC = 100°C
ID
60 A
39 A
Drain Current Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Power Dissipation
(TC=25°C)
TO-220
TO-220F 70.62
TO-263 54
IDM 120
EAS 1
EAR 180
PD
000
100
A
mJ
mJ
W
Junction Temperature
Storage Temperature
TJ +
TSTG
150
-55 ~ +150
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.61mH, IAS=60A, RG=20, Starting TJ=25
„ THERMAL DATA
PARAMETER SYMBOL
Junction to Ambient
TO-220/TO-220F
TO-263 110
TO-220
Junction to Case
TO-220F
TO-263 2.31
θJA
θJC
RATINGS
62.5
1.25
1.77
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS V
IGSS
VGS = 0 V, ID = 250μA 6
DS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
0V
1 μA
100 nA
-100 nA
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA 2.0
VGS = 10 V, ID = 30A
4.0 V
14 18 m
CISS
COSS
CRSS
VGS = 0V, VDS =25V, f = 1MHz
2000
400
115
pF
pF
pF
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=60A, RL=0.5,
VGS=10V (Note 2, 3)
VDS = 30V, VGS = 10 V
ID = 60A (Note 2, 3)
12 30 ns
11 30 ns
25 50 ns
15 30 ns
39 60 nC
12 nC
10 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-121.C



No Preview Available !

60N06
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD VGS = 0 V, IS = 60A
Continuous Source Current
IS
Pulsed Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
IS=60A, VGS=0V, dIF/dt=100A/μs
Note: 1. ISD60A, di/dt300A/μs, VDDBVDSS, Starting TJ=25
2. Pulse Test: Pulse Width300μs, Duty Cycle2%
3. Essentially independent of operating temperature.
60
3.4
MAX UNIT
1.6 V
60
120
A
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-121.C



No Preview Available !

60N06
„ TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-121.C



60N06 datasheet pdf
Download PDF
60N06 pdf
View PDF for Mobile


Related : Start with 60N0 Part Numbers by
60N03 Power MOSFET 60N03
Tuofeng Semiconductor
60N03 pdf
60N03 N-Channel Enhancement Mode Power MOSFET 60N03
Anachip
60N03 pdf
60N03 N-Ch 30V Fast Switching MOSFETs 60N03
Cmos
60N03 pdf
60N035 N-Channel Field Effect Transistor 60N035
ETC
60N035 pdf
60N03GP AP60N03GP 60N03GP
Advanced Power Electronics
60N03GP pdf
60N03L-10 ST60N03L-10 60N03L-10
STMicroelectronics
60N03L-10 pdf
60N03S AP60N03S 60N03S
Advanced Power Electronics
60N03S pdf
60N05 N-CHANNEL POWER MOSFET 60N05
UTC
60N05 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact