60N05 Datasheet PDF - Inchange Semiconductor

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60N05
Inchange Semiconductor

Part Number 60N05
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N05
·DESCRIPTION
·Drain Current ID= 60A@ TC=25
·Drain Source Voltage-
: VDSS= 50V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
50
±30
60
V
V
A
ID(puls)
Pulse Drain Current
240 A
Ptot Total Dissipation@TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.96 /W
62.5 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
60N05
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=60A ;VGS= 0
VGS= 10V; ID=30A
VGS= ±30V;VDS= 0
VDS= 50V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
50 V
2.0 4.0 V
2.5 V
0.02 Ω
±100 nA
250 µA
2900
500 pF
1500
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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