60N03S Datasheet PDF - Advanced Power Electronics

www.Datasheet-PDF.com

60N03S
Advanced Power Electronics

Part Number 60N03S
Description AP60N03S
Page 6 Pages


60N03S datasheet pdf
Download PDF
60N03S pdf
View PDF for Mobile

No Preview Available !

Advanced Power
Electronics Corp.
AP60N03S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
www.DataSheet4U.com
Description
GDS
TO-263
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03P) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
13.5mΩ
55A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
/W
/W
Data & specifications subject to change without notice
200218032



No Preview Available !

AP60N03S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=28A
VGS=4.5V, ID=22A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=28A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=28A
VDS=24V
VGS=5V
VDS=15V
ID=28A
RG=3.3Ω,VGS=10V
RD=0.53Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-V
- 0.037 - V/
- 11.5 13.5 mΩ
- 18 20 mΩ
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 22.4 - nC
- 2.7 - nC
- 14 - nC
- 7.4 - ns
- 81 - ns
- 24 - ns
- 18 - ns
- 950 - pF
- 440 - pF
- 145 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=55A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Min. Typ. Max. Units
- - 55 A
- - 215 A
- - 1.3 V



No Preview Available !

AP60N03S
200
T C =25 o C
150
www.DataSheet4U.com
100
V G =10V
V G =8.0V
V G =6.0V
50
V G =4.0V
0
012345678
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
T C =150 o C
100
V G =10V
V G =8.0V
V G =6.0V
50
V G =4.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
20
I D = 28 A
18 T C =25 o C
16
14
12
10
3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D =28A
1.6 V G =10V
1.4
1.2
1
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150



No Preview Available !

AP60N03S
60
55
50
45
40
www.DataSheet4U.com
35
30
25
20
15
10
5
0
25
50 75 100 125
T c , Case Temperature ( o C)
150
Fig 5. Maximum Drain Current v.s.
Case Temperature
60
40
20
0
0 50 100 150
T c , Case Temperature ( o C)
Fig 6. Typical Power Dissipation
1000
100
10us
100us
10
T c =25 o C
Single Pulse
1
1 10
V DS (V)
1ms
10ms
100ms
100
Fig 7. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 8. Effective Transient Thermal Impedance



60N03S datasheet pdf
Download PDF
60N03S pdf
View PDF for Mobile


Related : Start with 60N03 Part Numbers by
60N03 Power MOSFET 60N03
Tuofeng Semiconductor
60N03 pdf
60N03 N-Channel Enhancement Mode Power MOSFET 60N03
Anachip
60N03 pdf
60N03 N-Ch 30V Fast Switching MOSFETs 60N03
Cmos
60N03 pdf
60N035 N-Channel Field Effect Transistor 60N035
ETC
60N035 pdf
60N03GP AP60N03GP 60N03GP
Advanced Power Electronics
60N03GP pdf
60N03L-10 ST60N03L-10 60N03L-10
STMicroelectronics
60N03L-10 pdf
60N03S AP60N03S 60N03S
Advanced Power Electronics
60N03S pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact