60N03L-10 Datasheet PDF - STMicroelectronics

www.Datasheet-PDF.com

60N03L-10
STMicroelectronics

Part Number 60N03L-10
Description ST60N03L-10
Page 6 Pages


60N03L-10 datasheet pdf
Download PDF
60N03L-10 pdf
View PDF for Mobile

No Preview Available !

STB60N03L-10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STB60N03L-10 30 V < 0.01 60 A
www.DataSheet4U.com
s TYPICAL RDS(on) = 0.0085
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
PRELIMIRARY DATA
123
I2PAK
TO-262
3
1
D2PAK
TO-263
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1996
Value
30
30
± 20
60
42
240
150
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/6



No Preview Available !

STB60N03L-10
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
www.DataSheet4U.com
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
60
600
150
42
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On
Resistance
VGS = 10 V
VGS = 10 V
VGS = 5 V
VGS = 5 V
ID = 30 A
ID = 30 A
ID = 30 A
ID = 30 A
Tc = 100 oC
Tc = 25 oC
Tc = 100 oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
60
Typ. Max.
1.7 2.5
0.0085
0.0012
0.01
0.02
0.015
0.03
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 30 A
Min.
30
Typ.
50
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3500
1200
450
pF
pF
pF
2/6



No Preview Available !

STB60N03L-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
www.DataSheet4U.comQgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 15 V ID = 38 A
RG = 4.7
VGS = 5 V
VDD =
RG =
ID =
VGS = V
VDD = 10 V ID = 60 A
VGS = 15 V
Min.
Typ.
40
400
130
Max.
Unit
ns
ns
A/µs
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 75 A
RG = 4.7 VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
60
240
310
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 60 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 75 A
VDD = 0 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 10 A/µs
Tj = 150 oC
Min.
Typ.
Max.
60
240
Unit
A
A
100
0.25
5
1.5
V
ns
µC
A
3/6



No Preview Available !

STB60N03L-10
DIM.
A
A1
www.DataSheet4U.com B
B1
B2
C
C2
D
e
E
L
L1
L2
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.3
2.49
0.7
1.2
1.25
0.45
1.21
9
2.44
10
13.2
3.48
1.27
mm
TYP.
MAX.
4.6
2.69
0.93
1.38
1.4
0.6
1.36
9.35
2.64
10.28
13.5
3.78
1.37
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.354
0.096
0.393
0.519
0.137
0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.054
L1
L2 D
L
4/6



60N03L-10 datasheet pdf
Download PDF
60N03L-10 pdf
View PDF for Mobile


Related : Start with 60N03L-1 Part Numbers by
60N03L-10 ST60N03L-10 60N03L-10
STMicroelectronics
60N03L-10 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact