60N03 Datasheet PDF - Anachip

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60N03
Anachip

Part Number 60N03
Description N-Channel Enhancement Mode Power MOSFET
Page 5 Pages


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N-Channel Enhancement Mode Power MOSFET
AF60N03
„ Features
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- Pb Free Plating Product
„ Product Summary
BVDSS (V)
30
RDS(ON) (m)
12
ID (A)
45
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Assignments
(Front View)
3S
2D
1G
„ Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 60N03 X X
Feature
PN Package
F :MOSFET
D: TO-252
„ Block Diagram
Packing
Blank : Tube or Bulk
A : Tape & Reel
DS
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 8, 2005
1/5



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N-Channel Enhancement Mode Power MOSFET
AF60N03
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current, VGS=10V
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TC=25ºC
TC=100ºC
TC=25ºC
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
3.4
110
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
BVDSS/TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25ºC,
Coefficient
ID=1mA
Static Drain-Source
On-Resistance (Note 2)
VGS=10V, ID=20A
VGS=4.5V, ID=15A
Gate Threshold Voltage
VDS= VGS, ID=250uA
Forward Transconductance (Note 2) VDS=10V, ID=10A
Drain-Source Leakage Current
(TJ=25ºC)
VDS=30V, VGS=0V
Drain-Source Leakage Current
(TJ=175ºC)
VDS=24V, VGS=0V
Gate Source Leakage
VGS=±20V
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=20A
VDS=20V
VGS=4.5V
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=15V
ID=20A
RG=3.3, VGS=10V
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.026
-
-
-
25
-
-
-
11.6
3.9
7
8.8
57.5
18.5
6.4
1135
200
135
Max.
-
-
12
25
3
-
1
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ºC
m
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dl/dt=100A/µs
Min. Typ. Max. Unit
- - 1.3 V
- 23.3 -
ns
- 16 - nC
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 8, 2005
2/5



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N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
AF60N03
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Anachip Corp.
www.anachip.com.tw
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Rev. 1.0 Sep 8, 2005
3/5



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N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
AF60N03
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Anachip Corp.
www.anachip.com.tw
4/5
Fig 12. Gate Charge Waveform
Rev. 1.0 Sep 8, 2005



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