60LQ045 Datasheet PDF - International Rectifier


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60LQ045
International Rectifier

Part Number 60LQ045
Description SCHOTTKY RECTIFIER
Page 4 Pages

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PD-20504C
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
60LQ045
60A, 30V
Major Ratings and Characteristics
Description/Features
Characteristics
60LQ045 Units
IF(AV)
VRRM
60 A
45 V
IFSM @ tp = 8.3ms half-sine
400
VF @ 60Apk, TJ =125°C
0.6
TJ, Tstg Operating and storage -55 to 150
A
V
°C
The 60LQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for
typical high frequency switching power supplies and
resonant power convertors. Full MIL-PRF-19500 quality
conformance testing is availble on control drawings to
TX, TXV and S quality levels.
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
CASE STYLE
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Case Outline and Dimensions - SMD-1
CATHODEANODEANODE
1
03/20/02



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60LQ045
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
60LQ045
45
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
Limits Units
Conditions
60 A 50% duty cycle @ TC = 105°C, square waveform
400 A @ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
See Fig. 1 Q
IRM Max. Reverse Leakage Current
See Fig. 2 Q
CT Max. Junction Capacitance
L S Typical Series Inductance
Limits
0.68
0.82
0.6
0.74
0.8
45
2900
5.9
Units
Conditions
V @ 60A
V @ 120A
TJ = 25°C R
V @ 60A
V @ 120A
TJ = 125°C R
mA TJ = 25°C
VR = rated VR R
mA TJ = 125°C
pF VR = 5VDC, ( 1MHz, 25°C ) R
nH Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
TJ Max.Junction Temperature Range
Tstg
RthJC
Max. Storage Temperature Range
Max. Thermal Resistance, Junction
to Case
wt Weight (Typical)
Die Size
Case Style
Limits Units
-55 to 150 °C
-55 to 150 °C
1.0 °C/W
DC operation
2.6 g
200X200 mils
SMD-1
Conditions
See Fig. 4
Q Pulse Width < 300µs, Duty Cycle < 2%
R Pins 2 and 3 externally tied together
2
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1000
100
60LQ045
100
TJ = 150°C
10 125°C
100°C
1
0.1 25°C
0.01
0.001
0
10 20 30 40
Reverse Voltage - VR (V)
A
50
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
Tj = 125°C
10000
Tj = 25°C
1
0.0
0.2 0.4 0.6 0.8
Forward Voltage Drop - VF (V)
1.0
Fig. 1 - Max. Forward Voltage Drop Characteristics
TJ = 25°C
1000
0
10 20 30 40
Reverse Voltage - VR (V)
A
50
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Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
3



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60LQ045
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
160
60LQ045
R thJC = 1.0°C/W
140
120
DC
100
80
60
40
20
0
0 20 40 60 80 100
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/02
4 www.irf.com




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