602AQL Datasheet PDF - NXP Semiconductors

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602AQL
NXP Semiconductors

Part Number 602AQL
Description 2PD602AQL
Page 9 Pages


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2PD602AQL; 2PD602ARL;
2PD602ASL
50 V, 500 mA NPN general-purpose transistors
Rev. 01 — 27 October 2008
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number[1]
Package
NXP
2PD602AQL
SOT23
2PD602ARL
2PD602ASL
2PD602AQL/DG
SOT23
2PD602ARL/DG
2PD602ASL/DG
[1] /DG: halogen-free
JEDEC
TO-236AB
TO-236AB
PNP complement
-
2PB710ARL
2PB710ASL
-
2PB710ARL/DG
2PB710ASL/DG
1.2 Features
I General-purpose transistors
I Three current gain selections
I AEC-Q101 qualified
I Small SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
Quick reference data
Parameter
collector-emitter voltage
collector current
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA



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2PD602AxL
50 V, 500 mA NPN general-purpose transistors
Table 2.
Symbol
hFE
Quick reference data …continued
Parameter
Conditions
DC current gain
VCE = 10 V;
IC = 150 mA
hFE group Q
hFE group R
hFE group S
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
2. Pinning information
Min Typ Max Unit
[1]
85 -
120 -
170 -
170
240
340
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
33
12
1
2
sym021
3. Ordering information
4. Marking
Table 4. Ordering information
Type number[1] Package
Name Description
2PD602AQL
-
plastic surface-mounted package; 3 leads
2PD602ARL
2PD602ASL
2PD602AQL/DG -
plastic surface-mounted package; 3 leads
2PD602ARL/DG
2PD602ASL/DG
[1] /DG: halogen-free
Table 5. Marking codes
Type number
2PD602AQL
2PD602ARL
2PD602ASL
Marking code[1]
SH*
SG*
SF*
Version
SOT23
SOT23
2PD602AXL_1
Product data sheet
Rev. 01 — 27 October 2008
© NXP B.V. 2008. All rights reserved.
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2PD602AxL
50 V, 500 mA NPN general-purpose transistors
Table 5. Marking codes …continued
Type number
2PD602AQL/DG
2PD602ARL/DG
2PD602ASL/DG
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
SX*
SW*
SV*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC collector current
-
ICM peak collector current
single pulse;
tp 1 ms
-
IBM peak base current
Ptot total power dissipation
single pulse;
tp 1 ms
Tamb 25 °C
-
[1] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max Unit
60 V
50 V
5V
500 mA
1A
200 mA
250
150
+150
+150
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] - - 500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PD602AXL_1
Product data sheet
Rev. 01 — 27 October 2008
© NXP B.V. 2008. All rights reserved.
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2PD602AxL
50 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
IEBO
hFE
VCEsat
fT
collector-base cut-off current VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
emitter-base cut-off current VEB = 4 V; IC = 0 A
DC current gain
VCE = 10 V;
IC = 500 mA
hFE group Q
VCE = 10 V;
IC = 150 mA
hFE group R
VCE = 10 V;
IC = 150 mA
hFE group S
VCE = 10 V;
IC = 150 mA
collector-emitter saturation IC = 300 mA;
voltage
IB = 30 mA
transition frequency
VCE = 10 V;
IC = 50 mA;
f = 100 MHz
-
-
-
[1] 40
[1] 85
[1] 120
[1] 170
[1] -
[1]
-
-
-
-
-
-
-
-
10 nA
5 µA
10 nA
-
170
240
340
600 mV
hFE group Q
hFE group R
hFE group S
Cc
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
140 -
160 -
180 -
--
- MHz
- MHz
- MHz
15 pF
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
2PD602AXL_1
Product data sheet
Rev. 01 — 27 October 2008
© NXP B.V. 2008. All rights reserved.
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