4066 Datasheet PDF - STMicroelectronics

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4066
STMicroelectronics

Part Number 4066
Description MICROPOWER DUAL CMOS VOLTAGE COMPARATORS
Page 9 Pages


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HCF4066B
QUAD BILATERAL SWITCH FOR TRANSMISSION OR
MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS
s 15V DIGITAL OR ± 7.5V PEAK TO PEAK
SWITCHING
s 125TYPICAL ON RESISTANCE FOR 15V
OPERATION
s SWITCH ON RESISTANCE MATCHED TO
WITHIN 5TYP. OVER 15V SIGNAL INPUT
RANGE
s ON RESISTANCE FLAT OVER FULL PEAK
TO PEAK SIGNAL RANGE
s HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP. at fIS = 10KHz, RL = 10K
s HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at fIS = 1KHz, VIS = 5 Vpp,
VDD - VSS > 10V, RL = 10K
s EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET
CURRENT AND HIGH EFFECTIVE OFF
RESISTANCE : 10pA TYP.
at VDD - VSS = 10V, Tamb = 25°C
s EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from
signal circuit 1012typ.)
s LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at fIS = 0.9MHz, RL = 1K
s MATCHED CONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE : REDUCES
OUTPUT SIGNAL TRANSIENTS
s FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.)
s QUIESCENT CURRENT SPECIF. UP TO 20V
s 5V, 10V AND 15V PARAMETRIC RATINGS
PIN CONNECTION
DIP SOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
HCF4066BEY
HCF4066BM1
T&R
HCF4066M013TR
s INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
s 100% TESTED FOR QUIESCENT CURRENT
s MEETS ALL REQUIREMENTS OF JEDEC
JESD13B ” STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES”
DESCRIPTION
The HCF4066B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4066B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of
analog or digital signals.
It is pin for pin compatible with HCF4016B, but
exhibits a much lower ON resistance. In addition,
September 2001
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HCF4066B
the ON resistance is relatively constant over the
full input signal range. The HCF4066B consists of
four independent bilateral switches. A single
control signal is required per switch. Both the p
and n device in a given switch are biased ON or
OFF simultaneously by the control signal. As
shown in schematic diagram , the well of the
n-channel device on each switch is either tied to
the input when the switch is ON or to VSS when
the switch is OFF. This configuration eliminates
INPUT EQUIVALENT CIRCUIT
the variation of the switch-transistor threshold
voltage with input signal, and thus keeps the ON
resistance low over the full operating signal range.
The advantages over single channel switches
include peak input signal voltage swings equal to
the full supply voltage, and more constant ON
impedance over the input signal range. For
sample and hold applications, however, the
HCF4016B is recommended.
PIN DESCRIPTION
PIN No
1, 4, 8, 11
2, 3, 9, 10
13, 5, 6, 12
7
14
SYMBOL NAME AND FUNCTION
A to D I/O
A to D O/I
CONTROL
A to D
VSS
VDD
Independent Inputs/Out-
puts
Independent Outputs/
Inputs
Enable Inputs
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
CONTROL
H
L
SWITCH FUNCTION
ON
OFF
SCHEMATIC DIAGRAM (1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL
CIRCUITY)
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HCF4066B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDD Supply Voltage
-0.5 to +22
V
VI DC Input Voltage
-0.5 to VDD + 0.5
V
II DC Input Current
± 10 mA
PD Power Dissipation per Package
Power Dissipation per Output Transistor
200 mW
100 mW
Top Operating Temperature
-55 to +125
°C
Tstg Storage Temperature
-65 to +150
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VI
Top
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to VDD
-55 to 125
Unit
V
V
°C
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C,Typical temperature coefficient for all VDD value is 0.3 %/°C)
Test Condition
Value
Symbol Parameter
VI VDD
(V) (V)
IL Quiescent Device
Current (all
switches ON or all
switches OFF)
0/5
0/10
0/15
0/20
5
10
15
20
SIGNAL INPUTS (VIS) and OUTPUTS (VOS)
RON Resistance
VC=VDD RL = 10K
Return to (VDD-VSS)/2
VIS = VSS to VDD
5
10
15
ON Resistance RON
5
(between any 2 of RL = 10K, VC = VDD 10
4 switches)
15
TDH Total Harmonic
Distortion
VC = VDD = 5V, VSS = -5V
VIS (p-p) = 5V, RL = 10K
(sine wave centered in 0V)
fIS = 1KHz sine wave
-3dB Cutoff
Frequency (Switch
on)
VC = VDD = 5V, VSS = -5V
VIS (p-p) = 5V, RL = 1K
(sine wave centered in 0V)
-50dB Feedthrough
Frequency (switch
off)
VC = VSS = -5V
VIS (p-p) = 5V, RL = 1K
(sine wave centered in 0V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
0.01
0.01
0.01
0.02
0.25
0.5
1
5
7.5
15
30
150
7.5
15
µA
30
150
470 1050
180 400
125 240
5
10
15
0.4
1200
500
300
1200
500
300
%
40 MHz
1 MHz
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HCF4066B
Test Condition
Value
Symbol Parameter
VI VDD
TA = 25°C
-40 to 85°C -55 to 125°C Unit
(V) (V) Min. Typ. Max. Min. Max. Min. Max.
-50dB Crosstalk
Frequency
VC(A) = VDD = +5V
VC(B) = VSS = - 5V
VIS(A) = 5V (p-p)
50source, RL = 1K
8
MHz
tpd Propagation Delay
Time (signal input
to output)
RL = 200KΩ, VC = VDD
VSS = GND, CL = 50pF
VIS= 10V
square wave centered on 5V
tr, tf = 20ns
20 40
10 20
7 15
ns
CIS Input Capacitance
8
COS
Output
Capacitance
VC = VSS = -5
+5
8
pF
CIOS Feedthrough
0.5
Input/Output
Leakage Current
Switch OFF
VC = 0V
VIS = 18V, VOS = 0V
VIS = 0V, VOS = 18V
18
±10-3 ±0.1
±1
±1 µA
CONTROL (VC)
VILC
VIHC
Control Input Low
Voltage
Control Input High
Voltage
IIS< 10 µA
VIS = VSS, VOS = VDD
and
VIS = VDD, VOS = VSS
5
10
15
5
10
3.5
7
111
222
222
3.5 3.5
77
V
V
15 11
11 11
II Input Leakage
Current
VIS < VDD
VDD - VSS = 18V
18
±10-5 ±0.1
±1
±1 µA
Crosstalk (control
input to signal
output)
VC = 10V (sq. wave)
tr, tf = 20ns
RL = 10K
10
50
mV
Turn - On
Propagation Delay
Time
VIN = VDD, tr, tf = 20ns
CL = 50pF, RL = 1K
5
10
15
35 70
20 40
15 30
ns
Control Input
Repetition Rate
VIS=VDD, VSS=GND
RL = 1Kto GND
CL = 50pF, VC = 10V
sq. wave center on 5V
tr, tf = 20ns
VOS=1/2VOS at 1KHz
5
10
15
6
9
9.5
MHz
CI Input Capacitance
Any Input
5 7.5
pF
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