40107BE Datasheet PDF - ST Microelectronics

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40107BE
ST Microelectronics

Part Number 40107BE
Description HCF40107BE
Page 11 Pages


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HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
s 32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY -
136 mA TYP. AT VDD = 10V, VDS = 1V
s QUIESCENT CURRENT SPECIF. UP TO 20V
s 5V, 10V AND 15V PARAMETRIC RATINGS
s INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
s 100% TESTED FOR QUIESCENT CURRENT
s MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF40107B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40107B is a dual 2-input NAND buffer/driver
containing two independent 2-input NAND buffers
with open-drain single n-channel transistor
outputs. This device features a wired-OR
capability and high output sink current capability
(136 mA typ. at VDD = 10V, VDS = 1V).
DIP SOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
HCF40107BEY
HCF40107BM1
T&R
HCF40107M013TR
PIN CONNECTION
October 2002
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HCF40107B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
2, 1, 7, 6
3, 5
4
8
SYMBOL
A, B, D, E
C,F
VSS
VDD
NAME AND FUNCTION
Input
Outputs
Negative Supply Voltage
Positive Supply Voltage
FUNCTIONAL DIAGRAM
TRUTH TABLE
AB
LL
HL
LH
HH
* : Requires external and pull-up resistor (RL) to VDD.
# : Without pull-up resistor (3-state).
C
H* Z#
H* Z#
H* Z#
L
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LOGIC DIAGRAM
HCF40107B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDD Supply Voltage
VI DC Input Voltage
II DC Input Current
PD Power Dissipation per Package
Power Dissipation per Output Transistor
Top Operating Temperature
Tstg Storage Temperature
-0.5 to +22
-0.5 to VDD + 0.5
± 10
200
100
-55 to +125
-65 to +150
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VI
Top
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to VDD
-55 to 125
Unit
V
V
°C
3/11



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HCF40107B
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VI VO |IO| VDD
TA = 25°C
-40 to 85°C -55 to 125°C Unit
(V) (V) (µA) (V) Min. Typ. Max. Min. Max. Min. Max.
IL Quiescent Current 0/5
0/10
0/15
5 0.02 5
10 0.02 10
15 0.02 20
150 30
300 60
µA
600 120
0/20
20
0.04 100
3000
600
VIH** High Level Input
Voltage
0.5/4.5 <1 5 3.5
1/9 <1 10 7
3.5 3.5
77
V
1.5/13.5 <1 15 11
11 11
VIL** Low Level Input
Voltage
4.5/0.5 <1 5
9/1 <1 10
1.5 1.5 1.5
3 3 3V
13.5/1.5 <1 15
444
IOL Output Sink
5 0.4
5 21 32
16
12
Current
51
5 44 68 30 25
10 0.5
10 49 74
37
28 mA
10 1
10 89 136
68
51
15 0.5
15 66 100
50
38
IOH Output Drive
Current
No Internal Pull-up Device
mA
IIH, IIL Input Leakage
Current
0/18 Any Input 18
±10-5 ±0.1
±0.1
±1 µA
IOH, IOL 3-State Output
*** Leakage Current
0/18
18
18 ±10-4 2
2 20 µA
CI Input Capacitance
Any Input
5 7.5
pF
CO Output
Capacitance
Any Output
30
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
** Measured with external pull-up resistor, RL = 10kto VDD.
*** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Symbol
Parameter
tPHL tPLH Propagation Delay Time
High to Low
Low to High
tTHL tTLH Transition Time
High to Low
Low to High
(*) RL is external pull-up resistor to VDD.
VDD (V)
5
10
15
5
10
15
5
10
15
5
10
15
Test Condition
RL* = 120
RL* = 120
RL* = 120
RL* = 120
Value (*)
Unit
Min.
Typ.
100
45
30
100
60
50
50
20
10
50
35
25
Max.
200
90
60
200
120
100
100
40
20
100
70
50
ns
ns
ns
ns
4/11



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