3DD13009 Datasheet PDF - LGE

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3DD13009
LGE

Part Number 3DD13009
Description NPN Transistor
Page 2 Pages


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3DD13009(NPN)
TO-220 Transistor
1. BASE
TO-220
2. COLLECTOR
Features
3
2
1
— power switching applications
3. EMITTER
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
12
2
150
-55-150
Units
V
V
V
A
W
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tf
ts
Test conditions
IC =1mA, IE=0
IC=10mA, IB=0
IE= 1mA, IC=0
VCB=700V,IE=0
VCE=400V,IB=0
VEB=9V, IC=0
VCE=5V, IC=3A
IC=8A,IB=1.6A
IC=8A, IB=1.6A
VCE=10V,Ic=500mA,
f =1MHz
IC=8A, IB1=-IB2=1.6A
VCC=125V
MIN TYP MAX UNIT
700 V
400 V
9V
100 µA
100 µA
100 µA
8 40
1.5 V
1.6 V
4 MHz
0.9 µs
4 µs
CLASSIFICATION OF hFE
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40



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Typical Characteristics
3DD13009(NPN)
TO-220 Transistor



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