3DD13001 Datasheet PDF - Jiangsu Changjiang Electronics

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3DD13001
Jiangsu Changjiang Electronics

Part Number 3DD13001
Description TRANSISTOR
Page 3 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 1.25
www.DataSheetC4Uo.lcloemctor current
ICM : 0.2
Collector-base voltage
W Tamb=25
A
V(BR)CBO : 600 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
IC= 1 mA , IB=0
600
400
V
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
7
V
Collector cut-off current
Collector cut-off current
ICBO VCB= 600 V , IE=0
ICEO VCE= 400 V , IB=0
100 A
200 A
Emitter cut-off current
IEBO VEB= 7 V , IC=0
100 A
DC current gain
hFE 1
hFE 2
VCE= 20 V, IC= 20m A
VCE= 10V, IC= 0.25 m A
10
5
70
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2 V
Transition frequency
Fall time
Storage time
VCE= 20 V, IC=20mA
fT
f = 1MHz
8
tf
IC=50mA,
IB1=-IB2=5mA,
t S VCC=45V
MHz
0.3 s
1.5 s
CLASSIFICATION OF hFE(1)
Range 10-15 15-20 20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
60-65
65-70



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TO-92 PACKAGE OUTLINE DIMENSIONS
www.DataSheet4U.com
D
b
D1
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015



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