2sc2433 Datasheet PDF - Inchange Semiconductor

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2sc2433
Inchange Semiconductor

Part Number 2sc2433
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2433
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SA1043
APPLICATIONS
·Power switching applications
·High frequency power amplifier
·Switching regulators
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
30 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
10 A
150 W
175
-65~175
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2433
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICBO Collector Cutoff Current
VCB= 120V ; IE= 0
ICEO Collector Cutoff Current
VCE= 120V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 30A ; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 2A ; VCE= 10V
Switching Times
tr Rise Time
tstg Storage Time
tf Fall Time
IC= 15A; IB1= -IB2= 1.5A;
RL= 2Ω
MIN TYP. MAX UNIT
120 V
120 V
5V
1.5 V
2.0 V
50 μA
1 mA
50 μA
35 200
7
1000
pF
60 MHz
0.10 μs
0.10 μs
0.10 μs
isc websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/



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