JUNCTION FIELD EFFECT TRANSISTOR
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
The 2SK660 is suitable for converter of ECM.
• Compact package
• High forward transfer admittance
| yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
• Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
• Includes diode and high resistance at G - S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note
Gate to Drain Voltage
VGDO –20 V
ID 10 mA
IG 10 mA
Total Power Dissipation
PT 100 mW
Tj 125 °C
Tstg –55 to +125 °C
Note VGS = –1.0 V
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan