2SK660 Datasheet PDF - NEC

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2SK660
NEC

Part Number 2SK660
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
Page 8 Pages


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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
| yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK660
PACKAGE
SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note
VDSX
20
V
Gate to Drain Voltage
VGDO –20 V
Drain Current
ID 10 mA
Gate Current
IG 10 mA
Total Power Dissipation
PT 100 mW
Junction Temperature
Tj 125 °C
Storage Temperature
Tstg –55 to +125 °C
Note VGS = –1.0 V
EQUIVALENT CIRCUIT
Gate
Drain
Source
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002



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2SK660
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
IDSS
VGS(off)
| yfs1 |
VDS = 5.0 V, VGS = 0 V
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
Forward Transfer Admittance
| yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 5.0 V
VGS = 0 V
f = 1.0 MHz
Noise Voltage
NV See Test Circuit
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 k
JIS A
NV (r.m.s)
MIN. TYP. MAX. UNIT
60 500 µA
1.0 V
150 µS
150 1200
µS
4.5 6.0 pF
1.5 3.0 pF
1.2 3.0 pF
1.0 3.0 µV
C = 10 pF
2 Data Sheet D10753EJ2V0DS



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TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
0 30 60 90 120 150 180
TA - Ambient Temperature - ˚C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
1.0 0.8 0.6 0.4 0.2 0
0.2 0.4 0.6 0.8 1.0
10
20
30
40
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
GATE TO SOURCE VOLTAGE
3.0
VDS = 5 V
2.5
2.0
1.5
1.0
0.5
0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3
VGS - Gate to Source Voltage - V
0.4
2SK660
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.15 V
0.10 V
0.05 V
VGS = 0 V
0.05 V
0.10 V
0.15 V
0.20 V
0.25 V
0.30 V
2 4 68
VDS - Drain to Source Voltage - V
10
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
VDS = 5 V
0.8
0.6
0.4
0.2
0.4 0.2
0
0.2 0.4
VGS - Gate to Source Voltage - V
INPUT AND FEEDBACK CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
VDS = 0 V
8 f = 1.0 kHz
5 CISS
3
2
COSS
1
12
5 10 20
50 100
VDS - Drain to Source Voltage - V
Data Sheet D10753EJ2V0DS
3



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FORWARD TRANSFER ADMITTANCE AND
GATE TO SOURCE CUT-OFF VOLTAGE vs. ZERO-
GATE VOLTAGE DRAIN CURRENT CO-RELATION
10.0
5.0
VDS = 5 V
2.0
| yfs |
1.0
0.5
0.2
0.1
0.05
VGS (off)
0.02
0.01
10
20 50 100 200 500
Zero-Gate Voltage Drain Current - µ A
1000
2SK660
4 Data Sheet D10753EJ2V0DS



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