2SK617 Datasheet PDF - Inchange Semiconductor

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2SK617
Inchange Semiconductor

Part Number 2SK617
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current ID=1A@ TC=25
·Drain Source Voltage-
: VDSS= 800V(Min)
isc Product Specification
2SK617
DESCRIPTION
·Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
800 V
±20
V
1A
40 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK617
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 15V; ID= 1A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS=0
MIN TYP MAX UNIT
800 V
2.1 4.0 V
8Ω
±100
nA
1 mA
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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