2SK1971 Datasheet PDF - Renesas

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2SK1971
Renesas

Part Number 2SK1971
Description Silicon N Channel MOS FET
Page 7 Pages


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2SK1971
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
G
1
2
3
REJ03G0990-0200
(Previous: ADE-208-1338)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6



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2SK1971
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
500
±20
2.0
16
Typ
0.19
24
4320
1120
130
50
170
320
130
1.1
530
Ratings
500
±30
35
140
35
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.23
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS =400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 18 A, VGS = 10 V*3
S ID = 18 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 18 A, VGS = 10 V,
ns RL = 1.67
ns
ns
V IF =35 A, VGS = 0
ns IF = 35 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6



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2SK1971
Main Characteristics
Power vs. Temperature Derating
300
200
100
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V
6V
5.5 V
40
Pulse Test
30 5 V
20
4.5 V
10
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12 50 A
8
4 20 A
ID = 10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1000
300
100
30
10
3
1
0.3
0.1
1
Operation in this area is
limited by RDS (on)
DC OPpWera=ti1o0nm(Tsc(1=1S2mh51so°0Ct0)1)µ0sµs
Ta = 25°C
3 10 30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
40 VDS = 20 V
Pulse Test
30
Tc = 25°C
20
75°C
–25°C
10
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
Pulse Test
1
0.5
0.2 VGS = 10 V
0.1
0.05
2
5 10 20 50 100 200
Drain Current ID (A)



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2SK1971
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8 VGS = 10 V
0.6 ID = 50 A
20 A
0.4
0.2 10 A
0
–40 0 40 80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
di/dt = 100 A/ µs, VGS = 0
20 Ta = 25°C
10
0.5 1 2
5 10 20 50
Reverse Drain Current IDR (A)
1000
800
600
400
Dynamic Input Characteristics
VDD = 400 V
250 V
100 V
VGS
20
16
12
VDS I D = 35 A
8
200 VDD = 400 V
250 V
4
100 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
–25°C
20 Tc = 25°C
10 75°C
5
2 VDS= 20 V
Pulse Test
1
0.5
1
2 5 10 20 50 100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
VGS = 0
f = 1 MHz
10
0 10 20
Crss
30 40
50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
td(off)
200
tf
100
tr
50
td(on)
20 VGS = 10 V, VDD = 30 V
PW = 5 µs, duty 1 %
10
0.5 1 2
5 10
20
Drain Current ID (A)
50
Rev.2.00 Sep 07, 2005 page 4 of 6



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