2SD958 Datasheet PDF - Panasonic Semiconductor

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2SD958
Panasonic Semiconductor

Part Number 2SD958
Description Silicon NPN epitaxial planar type
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Transistors
2SD0958 (2SD958)
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SB0788 (2SB788)
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
120
120
7
20
50
400
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
321
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 120 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
120 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cut-off current (Emitter open) ICBO VCB = 50 V, IE = 0
100 nA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
1 µA
Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180 700
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
0.6 V
Transition frequency
fT VCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz
Noise voltage
NV VCE = 40 V, IC = 1 mA, GV = 80 dB
Rg = 100 k, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE 180 to 360 260 to 520 360 to 700
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00199BED
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2SD0958
PC Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
24
Ta = 25°C
IB = 50 µA
20
45 µA
16 40 µA
35 µA
12 30 µA
25 µA
8 20 µA
15 µA
4 10 µA
5 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
25°C Ta = 75°C
0.1
25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
600
VCE = 5 V
500
400
Ta = 75°C
300
25°C
25°C
200
100
0
0.1 1 10 100
Collector current IC (mA)
fT IE
800
VCB = 5 V
Ta = 25°C
600
400
200
0
0.1
1
10 100
Emitter current IE (mA)
Cob VCB
8
IE = 0
f = 1 MHz
Ta = 25°C
6
4
2
0
1 10 100
Collector-base voltage VCB (V)
NV IC
160
VCE = 10 V
GV = 80 dB
Function = FLAT
Ta = 25°C
120
Rg = 100 k
80
22 k
40
4.7 k
0
0.01 0.1
Collector current IC (mA)
1
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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