2SD946A Datasheet PDF - Panasonic Semiconductor

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2SD946A
Panasonic Semiconductor

Part Number 2SD946A
Description Silicon NPN epitaxial planar type
Page 3 Pages


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Power Transistors
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Features
Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD0946 VCBO
2SD0946A
2SD0946B
Collector-emitter voltage 2SD0946 VCEO
(Base open)
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
30
60
100
25
50
80
5
1
1.5
1.2
150
55 to +150
Electrical Characteristics Ta = 25°C ± 3°C
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
B
C
200 E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
2SD0946 VCBO
2SD0946A
IC = 100 µA, IE = 0
30
60
V
2SD0946B
100
Collector-emitter voltage
(Base open)
2SD1263 VCEO
2SD0946A
IC = 1 mA, IB = 0
25 V
50
2SD0946B
80
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
5
4 000
0.1
0.1
40 000
1.8
2.2
150
V
µA
µA
V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJD00164BED
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2SD0946, 2SD0946A, 2SD0946B
PC Ta
1.6
Without heat sink
1.2
0.8
0.4
VCE(sat) IC
IC/IB=1000
10
1 TC=–25˚C
100˚C
25˚C
0.1
VBE(sat) IC
IC/IB=1000
10
TC=–25˚C
1 100˚C
25˚C
0.1
0
0 40 80 120 160
Ambient temperature Ta (°C)
0.01
0.01
0.1 1
Collector current IC (A)
0.01
0.01
0.1 1
Collector current IC (A)
hFE IC
VCE=10V
105
25˚C
104
TC=100˚C
–25˚C
103
102
0.01
0.1 1
Collector current IC (A)
Cob VCB
24
IE=0
f=1MHz
TC=25˚C
20
16
12
8
4
0
1 10 100
Collector-base voltage VCB (V)
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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