2SD592A Datasheet PDF - Panasonic Semiconductor

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2SD592A
Panasonic Semiconductor

Part Number 2SD592A
Description Silicon NPN epitaxial planar type
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Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
50
5
1
1.5
750
150
55 to +150
Unit
V
V
V
A
A
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
VEBO
ICBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
60
50
5
85
50
Typ Max
0.1
340
0.2 0.4
0.85 1.20
200
20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00189CED
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2SD0592A
PC Ta
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
1.50
Ta = 25°C
1.25 IB = 10 mA
9 mA
1.00 8 mA
7 mA
6 mA
0.75 5 mA
4 mA
0.50 3 mA
2 mA
0.25 1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC IB
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
VCE(sat) IC
10 IC / IB = 10
1
Ta = 75°C
25°C
0.1 25°C
0.01
VBE(sat) IC
100 IC / IB = 10
10
25°C
1 Ta = −25°C
75°C
0.1
0.001
0.01
0.1 1
Collector current IC (A)
10
0.01
0.01
0.1 1
Collector current IC (A)
10
hFE IC
600
VCE = 10 V
500
400
300
Ta = 75°C
200
25°C
25°C
100
0
0.01 0.1
1
Collector current IC (A)
10
fT IE
200 VCB = 10 V
180 Ta = 25°C
160
140
120
100
80
60
40
20
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
VCER RBE
120
IC = 10 mA
Ta = 25°C
100
80
60
40
20
0
0.1 1 10 100
Base-emitter resistance RBE (k)
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ICEO Ta
104 VCE = 10 V
103
102
10
1
0 40 80 120 160
Ambient temperature Ta (°C)
2SD0592A
SJC00189CED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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