2SD1781KFRA Datasheet PDF - ROHM

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2SD1781KFRA
ROHM

Part Number 2SD1781KFRA
Description Medium Power Transistor
Page 8 Pages


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2SD1781K FRA
Medium Power Transistor (32V, 800mA)
Parameter
VCEO
IC
Value
32V
800mA
lFeatures
1)Very low VCE(sat).
  VCE(sat)=0.1V(Typ.)
 (IC/IB=500mA/50mA)
2)Higt current capacity in compact package.
3)Complements the 2SB1197K FRA.
lOutline
  SOT-346
  SC-59
SMT3
lInner circuit
Datasheet
AEC-Q101 Qualified
 
 
 
 
 
lApplication
POWER AMPLIFIER
lPackaging specifications
Part No.
Package
2SD1781K FRA
SOT-346
(SMT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2928 T146 180
8
3000
AF
                                                                                        
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1/6
20160909 - Rev.001



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2SD1781K FRA
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
40
32
5
800
1.5
200
150
-55 to +150
Unit
V
V
V
mA
A
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 50μA
Collector cut-off current
ICBO VCB = 20V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA
DC current gain
hFE VCE = 3V, IC = 100mA
Transition frequency
fT
VCE = 5V, IE = -50mA,
f = 100MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
Values
Min. Typ. Max.
40 -
-
32 -
-
5- -
- - 500
- - 500
- 100 400
120 - 390
- 150 -
- 15 -
Unit
V
V
V
nA
nA
mV
-
MHz
pF
hFE values are calssified as follows :
rank Q
R
-
-
-
hFE
120-270
180-390
-
-
-
*1 Pw=100ms Single pulse
*2 Each terminal mounted on a reference land.
                                            
 
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20160909 - Rev.001



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2SD1781K FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Ground Emitter Propagation
    Characteristics
      Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
    Current (I)
Fig.4 DC Current Gain vs. Collector
    Current (II)
                                                                                          
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20160909 - Rev.001



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2SD1781K FRA
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Collector-Emitter Saturation
    Voltage vs. Collector Current (I)
      Datasheet
Fig.6 Collector-Emitter Saturation
    Voltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
    vs. Collector Current
Fig.8 Gain Bandwidth Product vs.
    Emitter Current
                                                                                          
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4/6
20160909 - Rev.001



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