2SC6041 Datasheet PDF - Toshiba Semiconductor

www.Datasheet-PDF.com

2SC6041
Toshiba Semiconductor

Part Number 2SC6041
Description Transistor Silicon NPN Triple-Diffused Mesa Type
Page 5 Pages


2SC6041 datasheet pdf
Download PDF
2SC6041 pdf
View PDF for Mobile


No Preview Available !

TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
2SC6041
Horizontal Deflection Output for HDTV,
Digital TV, Projection TV.
z High voltage
: VCBO = 1700 V
z Low saturation voltage
: VCE (sat) = 1.5 V (max)
z High speed
: tf = 0.15 µs (typ.)
z Collector metal (fin) is fully covered with mold resin.
2SC6041
Unit: mm
Maximum Ratings (TC = 25°C)
Characteristic
Collectorbase voltage
Collectoremitter voltage
Emitterbase voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
1700
750
5
15
30
7.5
70
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
Marking
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
TOSHIBA
C6041
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-06-20
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

Electrical Characteristics (TC = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Emitter–base breakdown voltage
DC current gain
Collector–emitter saturation voltage
Base–emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) EBO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg
tf
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IE = 1 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 12 A
IC = 12 A, IB = 3 A
IC = 12 A, IB = 3 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 A, IB1 (end) = 0.8 A
fH = 32 kHz
2SC6041
Min Typ. Max Unit
――
1 mA
― ― 100 µA
5 ―― V
30 60
8 12
57
― ― 1.5 V
1.25
V
2 MHz
260
pF
4
0.15
µs
2 2006-06-20
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

ICVCE
20
3.5 4
16
3
2.5
2
12
0.8 1.0
1.2
1.5
8 0.6
0.4
IB= 0.2A
4
Com m on em itter
0 TC = 25°C
0 2 4 6 8 10
Collector - em itter voltage VCE (V)
10
1
0 .1
0.01
1
100
10
hFEIC
100
25
TC = - 25°C
Com m on em itter
1
0 .0 1
VCE = 5 V
0.1 1 10
Collector current IC (A)
100
10
1
0 .1
0.01
1
ICVBE
20
Com m on em itter
16 VCE = 5 V
12
8 25
4
TC = 100°C
- 25
10
1
0 .1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Bas eem itter voltage VBE (V)
3
0.01
1
2SC6041
VCE(sat)IC
10 8
6
IC /IB = 4
Com m on em itter
TC=25°C
10
Collector current IC (A)
100
VCE(sat)IC
10
8
6
IC/IB= 4
Com m on em itter
TC = 25°C
10
Collector current IC (A)
100
VCE(sat)IC
10
86
IC /IB = 4
Com m on em itter
TC = 100°C
10
Collector current IC (A)
100
2006-06-20
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

2SC6041
rth(j-c) - tw
10
1
0.1
0.01
0.001
01.00001
0.0010001μ 0.001
TC = 25°C (infinite heat s ink)
Curves s hould be applied in the
therm al lim ited area.
(Single nonrepetitive puls e)
1 m0.01 100.1m   1100 m 10
Pulse width tw (s)
100 1000
Safe Operating Area
100
Ic max (pulse d)
Ic max (continuous)
10
D C  operat ion
(Tc=25°C )
1
100 ms
100 μs10 μs
1 ms
10 ms
Reverse Bias-Safe Operating Aria
100
Ic max (30A)
440 V,30 A
10
1
0.1
0.1
0 .0 1
Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly w ith increase in
temperature.
VCE O m ax
1 10 100 1000
Collector-emitter voltage VCE (V)
1700V,10mA
0.01
0.001
@ Ta = 25°C
Nonrepeated pulse
lB2=3A / L = 500 µs
VCBO m ax
10
100
1000
10000
Collector-emitter voltage VCE (V)
PC-TC
100
Infinite heat sink
80
60
40
20
0
0 25 50 75 100 125 150 175
Case temperature TC (°C)
4
2006-06-20
Free Datasheet http://www.datasheet4u.com/



2SC6041 datasheet pdf
Download PDF
2SC6041 pdf
View PDF for Mobile


Related : Start with 2SC604 Part Numbers by
2SC6040 DC-DC Converter Applications 2SC6040
Toshiba Semiconductor
2SC6040 pdf
2SC6041 Transistor Silicon NPN Triple-Diffused Mesa Type 2SC6041
Toshiba Semiconductor
2SC6041 pdf
2SC6042 Silicon NPN Triple Diffused Type 2SC6042
Toshiba Semiconductor
2SC6042 pdf
2SC6043 NPN Epitaxial Planar Silicon Transistors 2SC6043
Sanyo Semicon Device
2SC6043 pdf
2SC6043 Bipolar Transistor 2SC6043
ON Semiconductor
2SC6043 pdf
2SC6044 NPN Epitaxial Planar Silicon Transistors 2SC6044
Sanyo Semicon Device
2SC6044 pdf
2SC6046 GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE 2SC6046
Isahaya Electronics
2SC6046 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact