2SC5820 Datasheet PDF - Renesas Technology

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2SC5820
Renesas Technology

Part Number 2SC5820
Description Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Page 11 Pages


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2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Application
High gain bandwidth product
fT = 20 GHz typ.
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
Note: Marking is “WU–“.
3
1
4
REJ03G0758-0200
(Previous ADE-208-1604A)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
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Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
12
4.0
1.5
35
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 10



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2SC5820
Electrical Characteristics
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
3rd. Order Intercept Point
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
ICBO   1 µA VCB = 12 V, IE = 0
ICEO   1 µA VCE = 4 V, RBE =
IEBO   10 µA VEB = 1.5 V, IC = 0
hFE
70 110 150
VCE = 2 V, IC = 20 mA
Cob 0.3 0.6 pF VCB = 2 V, IE = 0, f = 1 MHz
fT 17 20 GHz VCE = 2 V, IC = 30 mA
f = 2 GHz
PG
13 17.5
dB VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
NF
1.15 1.7
dB VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
IP3 10 dBm VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
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Rev.2.00 Aug 10, 2005 page 2 of 10



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2SC5820
Main Characteristics
Collector Power Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
50
VCE = 2 V
40
30
20
10
0
0.2 0.4 0.6 0.8
1
www.DataSheet4U.com Base to Emitter Voltage VBE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
IE = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0 1234 5
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 3 of 10
Typical Output Characteristics
500 µA
50 450 µA
400 µA
40 350 µA
300 µA
30 250 µA
200 µA
20 150 µA
100 µA
10
IB = 50 µA
01
23
4
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 2 V
150
100
50
0
12
5 10 20 50 100
Collector Current IC (mA)
Emitter Input Capacitance vs.
Emitter to Base Voltage
2.0
IC = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
-1 0 1
Emitter to Base Voltage VEB (V)



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2SC5820
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.0
IE = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0 1234 5
Collector to Base Voltage VCB (V)
S21 Parameter vs. Collector Current
20
VCE = 2 V
f = 2 GHz
16
12
8
4
0
1
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2 5 10 20 50 100
Collector Current IC (mA)
Noise Figure vs. Collector Current
5
f = 1.8 GHz
4
3
2
VVCCEE
=
=
1
3
V
V
VCE = 2 V
1
0
12
5 10 20 50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 10
Gain Bandwidth Product vs.
Collector Current
30
f= 2 GHz
VCE = 2 V
20
10
0
12
5 10 20 50 100
Collector Current IC (mA)
3rd. Order Intercept Point (IP3)
20
f = 1.8 GHz
VCE = 2 V
Fundamental
0 Ic = 5 mA
-20
3rd. Harmonic
-40
-60
-80 -60 -40 -20 0 20
Input Power PIN (dBm)
Power Gain vs. Collector Current
20
f = 1.8 GHz
VCE = 3 V
16 VCE = 2 V
12
VCE = 1 V
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)



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