2SC536KM Datasheet PDF - BLUE ROCKET ELECTRONICS

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2SC536KM
BLUE ROCKET ELECTRONICS

Part Number 2SC536KM
Description Silicon NPN transistor
Page 6 Pages


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2SC536M/KM
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
大电流容量,宽阔的安全工作区。
Large current capacity and wide ASO.

用途 / Applications
用于小信号一般放大电路。
Small signal general purpose amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
D
60120
E
100200
F
160320
Marking
H53D
H53E
H53F
G
280560
H53G
H
480960
H53H
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2SC536M/KM
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
2SC536M
2SC536KM
2SC536M
2SC536KM
符号
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
55
30
50
5.0
100
300
250
150
-55150
单位
Unit
V
V
V
mA
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
Collector- Base Time Constant
符号
Symbol
ICBO
IEBO
hFE
测试条件
Test Conditions
VCB=35V IE=0
VEB=4.0V IC=0
VCE=6.0V IC=1.0mA
VCE(sat) IC=50mA
IB=5.0mA
fT
Cob
CC.rbb
VCE=6.0V
VCB=6.0V
f=1.0MHz
VCB=6.0V
f=31.9MHz
IC=1.0mA
IE=0
Ic=1.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
1.0 μA
1.0 μA
60 960
0.5 V
100 MHz
3.5 pF
250 pS
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2SC536M/KM
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SC536M/KM
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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