2SC4555 Datasheet PDF - Kexin

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2SC4555
Kexin

Part Number 2SC4555
Description NPN Epitaxial Planar Silicon Transistor
Page 2 Pages


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SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC4555
Features
Very small-sized package
Low collector-to-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
20
15
5
500
1
150
105
-55 to +150
Unit
V
V
V
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 15V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 2V , IC = 10mA
fT VCE = 2V , IC = 50mA
Cob VCB = 10V, f = 1MHz
IC = 5mA , IB = 0.5mA
VCE(sat)
IC = 200mA , IB = 10mA
VBE(sat) IC = 200mA , IB = 10mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
5
135 270
UT
6
200 400
7
300 600
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
135 600
300 MHz
4.0 pF
30 V
160 300
0.95 1.2 V
20 V
15 V
5V
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