2SC4552 Datasheet PDF - Renesas

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2SC4552
Renesas

Part Number 2SC4552
Description SILICON POWER TRANSISTOR
Page 8 Pages


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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE 100 (VCE = 2 V, IC = 3 A)
VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 300 µs, duty cycle 10%
Ratings
100
60
7.0
15
30
7.5
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
© 21090928
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2SC4552
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
VCEO(SUS)
VCEX(SUS)
IC = 8.0 A, IB = 0.8 A, L = 1 mH
IC = 8.0 A, IB1 = IB2 = 0.8 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
VCB = 60 V, IE = 0
VCE = 60 V, RBE = 50 , Ta = 125°C
VCE = 60 V, VBE(OFF) = 1.5 V
VCE = 60 V, VBE(OFF) = 1.5 V,
Ta = 125°C
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 1.5 A
DC current gain
hFE2* VCE = 2.0 V, IC = 3.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 8.0 A
Collector saturation voltage VCE(sat)1* IC = 8.0 A, IB = 0.4 A
Collector saturation voltage VCE(sat)2* IC = 12 A, IB = 0.6 A
Base saturation voltage
VBE(sat)1* IC = 8.0 A, IB = 0.4 A
Base saturation voltage
VBE(sat)2* IC = 12 A, IB = 0.6 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 1.5 A
Turn-on time
Storage time
Fall time
ton IC = 8.0 A, RL = 6.3 ,
tstg IB1 = IB2 = 0.4 A, VCC 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
MIN.
60
60
TYP.
MAX.
Unit
V
V
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
100
100 400
60
0.3 V
0.5 V
1.2 V
1.5 V
180 pF
120 MHz
0.3 µs
1.5 µs
0.3 µs
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2 Data Sheet D15598EJ2V0DS
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