2SC4226 Datasheet PDF - Kexin

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2SC4226
Kexin

Part Number 2SC4226
Description NPN Silicon Epitaxial Transistor
Page 1 Pages


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SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC4226
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
Low noise and high gain.
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
High gain.
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
20
12
3.0
100
150
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
1 Emitter
21 EBmitaterse
2 Base
33 CColleoctollrecotr
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW 350
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
hFE VCE = 3V, IC = 7 mA
S21e 2 VCE = 3V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre VCB = 3 V, IE = 0 , f = 1 MHz
fT VCE =3V, IC = 7 mA
s, Duty Cycle 2%.
hFE Classification
Marking
Rank
hFE
R23
R23
40 80
R24
R24
70 140
R25
R25
125 250
Min Typ Max Unit
1.0 A
1.0 A
40 110 250
79
dB
1.2 2.5 dB
0.7 1.5 pF
3.0 4.5
GHz
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