2SC3326 Datasheet PDF - BLUE ROCKET ELECTRONICS

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2SC3326
BLUE ROCKET ELECTRONICS

Part Number 2SC3326
Description Silicon NPN transistor
Page 6 Pages


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2SC3326
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
VEBOhFE
High emitter-base voltage, High DC current gain.
用途 / Applications
用于开关。
For muting and switching applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
200700
B
3501200
Marking
HPA HPB
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2SC3326
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
20
12
300
60
150
150
-55150
单位
Unit
V
V
V
mA
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector-emitter saturation
voltage
Base-emitter voltage
Transition Frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
符号
Symbol
ICBO
IEBO
hFE
测试条件
Test Conditions
VCB=50V IE=0
VEB=8.0V IC=0
VCE=2.0V IC=4.0mA
VCE(sat) IC=30mA
IB=3.0mA
VBE VCE=2.0V IC=4.0mA
fT VCE=6.0V IC=4.0mA
Cob
VCB=10V IE=0
f=1.0MHz
ton
tstg
最小值 典型值 最大值 单位
Min Typ Max Unit
0.1 μA
0.1 μA
200 1200
0.042 0.3 V
0.61 V
30 MHz
4.8 7.0 pF
160 nS
500 nS
tf 130 nS
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2SC3326
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SC3326
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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