2SC3130 Datasheet PDF - BLUE ROCKET ELECTRONICS

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2SC3130
BLUE ROCKET ELECTRONICS

Part Number 2SC3130
Description Silicon NPN transistor
Page 6 Pages


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2SC3130
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
特征频率 fT 高,共基极输出电容小和反向传输出电容小。
High fT, small Cob and small Crb.
用途 / Applications
用于高频放大、振荡、混频。
High frequency amplifier, oscillation and mixing amplification.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
P
75130
Q
110220
Marking
H1SP
H1SQ
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2SC3130
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
15
10
3.0
50
150
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector Cut-Off Current
DC Current Gain
hFE ratio
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector output capacitance
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
*hFE= hFE2/hFE1
符号
Symbol
VCEO
VEBO
ICBO
hFE
*hFE
测试条件
Test Conditions
IC=2.0mA IB=0
IC=10μA
IB=0
VCB=10V IE=0
VCE=4.0V Ic=5.0mA
hFE:VCE=4.0V Ic=100μA
hFE:VCE=4.0V Ic=5.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
10 V
3.0 V
1.0 μA
75 220
0.75 1.60
VCE(sat)
fT
Cob
Crb
rbb’Cc
IC=20mA
VCE=4.0V
f=200MHz
VCB=4.0V
f=1.0MHz
VCB=4.0V
f=1.0MHz
VCB=4.0V
f=31.9MHz
IB=4.0mA
IC=-5.0mA
IE=0,
IE=0,
IC=5.0mA
1.4
1.9
1.4
0.45
11
0.5 V
2.5 GHz
pF
pF
ps
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2SC3130
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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2SC3130
Rev.E Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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