2SB886 Datasheet PDF - SavantIC

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2SB886
SavantIC

Part Number 2SB886
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1196
·DARLINGTON
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer
·Hammer drivers
·Relay drivers,
·Voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB886
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
PC Collector dissipation
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-110
-100
-6
-8
-12
40
1.75
150
-50~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB886
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=?
-100
V
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
-110
V
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-8mA
-1.0 -1.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-8mA
-2.0 V
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-80V; IE=0
VEB=-5V; IC=0
-0.1 mA
-3.0 mA
fT Transition frequency
IC=-4A ; VCE=-5V
20 MHz
hFE DC current gain
IC=-4A ; VCE=-3V
1500 4000
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-4A;IB1=-IB2=-8mA
RL=12.5E,Duty cycleF1%
VCC=50V
0.7 µs
1.4 µs
1.5 µs
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB886
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3



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