2SB775 Datasheet PDF - SavantIC

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2SB775
SavantIC

Part Number 2SB775
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD895
·Wide area of safe operation
·Large current capability
APPLICATIONS
·85V/6A, AF 35W output applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SB775
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
-100
-85
-6
-6
-10
60
150
-40~150
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB775
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=>
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE Base-emitter on voltage
IC=-1A;VCE=-5V
ICBO Collector cut-off current
VCB=-40V IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
COB Collector output capacitance
f=1MHz;VCB=10V
Switching times
-85 V
-100
V
-6 V
-1.4 -2.0
V
-1.5 V
-0.1 mA
-0.1 mA
60 200
20
18 MHz
160 pF
ton Turn-on time
tstg Storage time
tf Fall time
IC=-1.0A; IB1=-IB2=-0.1A
RL=20D;VCC=-20V
0.12 µs
1.29 µs
0.36 µs
hFE-1 Classifications
DE
60-120
100-200
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB775
Fig.2 outline dimensions
3



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